Exploring the Effects of Placement and Electron Angular Distribution on Two Adjacent Mask Holes During Plasma Etching Process

Zhang, Peng; Zhang, Lidan; Lv, Kemin

doi:10.1007/s11090-020-10113-y

Cited by 12 publications

(9 citation statements)

References 38 publications

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“…图10中也分别给出中和过剩的正电荷的方法 [3,92] . 该方法也被模拟证实可以有效改善刻蚀效果 [93,94] . 应 [95,96] 等凸显, 导致等离子体密度在径向上变得极其不均匀, 最终影响刻蚀工艺的质量 [95,97−101] .…”

Section: 在近期对真实的能量依赖的二次电子发射的研究中研究者发现极板上大量的二次电子发射同unclassified

Electron heating dynamics and plasma parameters control in capacitively coupled plasma

Wang¹,

Wen²,

Tian³

et al. 2021

Acta Phys. Sin.

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Capacitively coupled plasma (CCP) has gain wide attention due to its important applications in industry. The researches of CCP mainly focus on the discharge characteristics and plasma parameters under different discharge conditions to obtain a good understanding of the discharge, find good methods of controlling the charged particle properties, and improve the process performance and efficiency. The controlling of plasma parameters is based on the following three aspects: gas, chamber, and power source. Changing these discharge conditions can directly influence the sheath dynamics and the charged particle heating process, which can further influence the electron and ion distribution functions, the plasma uniformity, and the production of neutral particles, etc. Based on a review of the recent years’ researches of CCP, the electron heating dynamics and several common methods of controlling the plasma parameters, i.e. voltage waveform tailoring, realistic secondary electron emission, and magnetized capacitively coupled plasma are introduced and discussed in detail in this work.

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Section: 在近期对真实的能量依赖的二次电子发射的研究中研究者发现极板上大量的二次电子发射同unclassified

Electron heating dynamics and plasma parameters control in capacitively coupled plasma

Wang¹,

Wen²,

Tian³

et al. 2021

Acta Phys. Sin.

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“…The main reaction paths and concentration of active species were observed. Zhang et al [20] developed a chemical kinetic mechanism of ignition enhancement and concluded that methane combustion has a great influence on the O atom and exciting species. Besides this, Kim et al [21] studied the premixed methane/air plasma combustion by considering the excited species of oxygen and nitrogen.…”

Section: Introductionmentioning

confidence: 99%

Ignition thresholds and flame propagation of methane-air mixture: detailed kinetic study coupled with electrical measurements of the nanosecond repetitively pulsed plasma discharges

Mehdi¹,

Fontanarosa²,

Bonuso³

et al. 2022

J. Phys. D: Appl. Phys.

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A disk-ring nanosecond pulsed discharges plasma actuator was developed to be applied in a rectangular cross-section burner. The measured reduced electric field (EN), power dissipation and energy per pulse were used for validation of the plasma kinetic code ZDPlaskin. Then the effect of plasma discharges dynamics on methane/air flames, were numerically estimated. Firstly, plasma chemistry computations based on an extended kinetic mechanism of methane/air mixtures were performed by ZDPlasKin. Then, the results obtained by the ZDPlasKin in the form of kinetic effects (concentrations of O, OH, O3, CH, CH3 and H) and thermal effects (rise in temperature) were used in CHEMKIN to evaluate the combustion enhancement. The flame speed was improved by increasing both reduced electric field and repetition rates. Assuming EN = 200Td (as in experiments), and pulse repetition rate equal to 100Hz, the flame speed was increased of 26% in comparison with the case without the plasma actuation. Furthermore, at 10000 Hz, the flame speed was three times higher than at 100Hz. The ignition delay time greatly reduced from 1.2×10-3s (without plasma) up to 3.0×10-5s at 10000Hz repetition rate. The plasma assisted ignition n (PAI) permits ignition of the mixture at lower inlet temperature than in the case of self-ignition, meaning that ignition is possible in cold flow condition, with a possible application for the re-ignition problems at high altitude conditions. Finally, higher repetition rate leads to lower number of required pulses for the ignition of the CH4-air mixture and lower peak flame temperature.

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“…Moreover, the mask can charge up negatively in the presence of a wide angular distribution of the electron velocities at the wafer. This can lead to an attraction of positive ions, which causes mask distortion [20,21]. These issues represent significant limitations of modern HAR plasma etching and lead to a continuous increase of driving voltages to ensure even higher ion energies to overcome retarding potentials inside etch features.…”

Section: Introductionmentioning

confidence: 99%

“…This approach, however, only treats the symptoms of a problem, whose origin can be removed by ensuring in-feature surface charge neutralization. This requires the generation of a significant flux of electrons with high velocities directed normal to the electrode [20,21]. This would also reduce the negative charge-up of the mask.…”

Section: Introductionmentioning

confidence: 99%

Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch features

Hartmann

Wang

Nösges

et al. 2021

J. Phys. D: Appl. Phys.

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Low pressure single- or dual-frequency capacitively coupled radio frequency (RF) plasmas are frequently used for high-aspect ratio (HAR) dielectric etching due to their capability to generate vertical ion bombardment of the wafer at high energies. Electrons typically reach the wafer at low energies and with a wide angular distribution during the local sheath collapse. Thus, in contrast to positive ions, electrons cannot propagate deeply into HAR etch features and the bottom as well as the sidewalls of such trenches can charge up positively, while the mask charges negatively. This causes etch stops and distortion of profile shapes. Here, we investigate low pressure, high voltage capacitively coupled RF argon gas discharges by Particle-In-Cell/Monte Carlo collisions simulations and demonstrate that this problem can be solved by Voltage Waveform Tailoring, i.e. the velocity and angular distribution of electrons impacting on the electrodes can be tuned towards high velocities and small angles to the surface-normal, while keeping the energies of the impacting ions high. The applied voltage waveforms consist of a base frequency of 400 kHz with 10 kV amplitude and a series of higher harmonics. A high frequency component at 40 or 60 MHz is used additionally. Square voltage waveforms with different rise-times are examined as well. We show that high fluxes of electrons towards the wafer at normal velocities of up to 2.2 × 107 m s−1 (corresponding to 1.4 keV energy) can be realized.

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Exploring the Effects of Placement and Electron Angular Distribution on Two Adjacent Mask Holes During Plasma Etching Process

Cited by 12 publications

References 38 publications

Electron heating dynamics and plasma parameters control in capacitively coupled plasma

Electron heating dynamics and plasma parameters control in capacitively coupled plasma

Ignition thresholds and flame propagation of methane-air mixture: detailed kinetic study coupled with electrical measurements of the nanosecond repetitively pulsed plasma discharges

Control of electron velocity distributions at the wafer by tailored voltage waveforms in capacitively coupled plasmas to compensate surface charging in high-aspect ratio etch features

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