The high luminosity upgrade of the LHC is targeted to deliver 3000 fb −1 at a luminosity of 5 × 10 34 cm −2 s −1 . Higher granularity, 140 collisions per bunch crossing and existing bandwidth limitations require a reduction of the amount of data at module level. New modules have binary readout, on-chip p T discrimination and capabilities to provide track finding data at 40 MHz to the L1-trigger. The CMS collaboration has undertaken R&D effort to develop new planar sensors for the pixel-strip (PS) module, which has to withstand 1 × 10 15 cm −2 1 MeV neutron equivalent fluence in the innermost layer of the tracker. The module is composed of a strip sensor and a macro pixel sensor with 100 µm x 1.5 mm pixel size. Sensors were characterized in the laboratory and the effects of different process parameters and sensor concepts were studied. This contribution presents a new sensor prototype with n-pixels in p-bulk material in planar technology for the PS module. A new inverted module concept is presented, which has advantages with respect to the baseline concept. Electrical characterization of sensors and SEM-images are presented.
AbstractThe high luminosity upgrade of the LHC is targeted to deliver 3000 fb −1 at a luminosity of 5 × 10 34 cm −2 s −1 . Higher granularity, 140 collisions per bunch crossing and existing bandwidth limitations require a reduction of the amount of data at module level. New modules have binary readout, on-chip p T discrimination and capabilities to provide track finding data at 40 MHz to the L1-trigger. The CMS collaboration has undertaken R&D effort to develop new planar sensors for the pixel-strip (PS) module, which has to withstand 1 × 10 15 cm −2 1 MeV neutron equivalent fluence in the innermost layer of the tracker. The module is composed of a strip sensor and a macro pixel sensor with 100 µm x 1.5 mm pixel size. Sensors were characterized in the laboratory and the effects of different process parameters and sensor concepts were studied. This contribution presents a new sensor prototype with n-pixels in p-bulk material in planar technology for the PS module. A new inverted module concept is presented, which has advantages with respect to the baseline concept. Electrical characterization of sensors and SEM-images are presented.