2010
DOI: 10.1016/j.ssc.2009.11.003
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Exploring thermoelectric effects and Wiedemann–Franz violation in magnetic nanostructures via micromachined thermal platforms

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Cited by 26 publications
(21 citation statements)
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“…µΩ-cm at room temperature, a factor of 2 or more lower than our earlier Ni-Fe films, 34 and in line with typical values for good quality permalloy of this thickness. The k values for all films are tightly grouped, with a roughly linear T dependence expected from k e = 1/3c el v F e = 1/3γT v F for electronic thermal conductivity in the limit of a temperature-independent electron mean free path, e .…”
Section: Resultssupporting
confidence: 90%
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“…µΩ-cm at room temperature, a factor of 2 or more lower than our earlier Ni-Fe films, 34 and in line with typical values for good quality permalloy of this thickness. The k values for all films are tightly grouped, with a roughly linear T dependence expected from k e = 1/3c el v F e = 1/3γT v F for electronic thermal conductivity in the limit of a temperature-independent electron mean free path, e .…”
Section: Resultssupporting
confidence: 90%
“…γ is the electronic heat capacity coefficient and v F the Fermi velocity. Here we also compare our k data for Ni-Fe films from an earlier paper 34 . Note that these curves are less linear, and that the drop at lower T is the feature that drives the drop in L we previously reported.…”
Section: Resultsmentioning
confidence: 88%
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“…Ni, and Cu metals show a significant phonon-drag contribution at 70 K, which is decreased in bulk Ni by adding Co impurities as Farrell and Greig showed 88 . In nanocrystalline metals, phonon transport is restricted and the phonon-electron scattering probability is thus reduced [89][90][91] .…”
Section: (C)mentioning
confidence: 99%
“…We used anisotropic Si etching with KOH to release the Si-N thermal isolation structure for these groups of platforms. We have previously reported more details of our techniques and k of Si-N measured using three platforms, 30 as well as measurements of k and thermopower of several metal films [30][31][32] . Because measurements of K of the Si-N bridge are made without the need to subtract large contributions from thermal conductance of metallic leads or radiation, our measurements are much more sensitive than others made using micromachined structures with different geometries 33 .…”
Section: Experimental Techniquementioning
confidence: 99%