Explosion Suppression Mechanism Characteristics of MEMS S&A Device With In Situ Synthetic Primer

Abstract

The traditional silicon-based micro-electro-mechanical systems (MEMS) safety and arming (S&A) device fuze cannot isolate abnormal outputs in the detonation environment, which creates hazards for personnel. To address this problem, we report the design of a MEMS S&A device with integrated silver, copper, nickel and polyimide (PI) films, which is based on the principle of a MEMS S&A device and uses copper azide as the primer. The MEMS S&A device was optimized using theoretical calculations of the explosion suppression mechanism performance in a detonation field, where the theoretical model was verified by dynamic simulation (LS-Dyna). Silicon-based MEMS processing technology was used to integrate the MEMS S&A device with energy-absorbing materials, and the device performance was compared in detonation tests. Silicon-based MEMS S&A devices with silver, copper, nickel, and PI (100-μm-thick) achieved a reliable explosion suppression mechanism capability when exposed to a detonation wave. The residual stress was measured using Raman microscopy, and the PI film exhibited the best explosion suppression mechanism performance of the four materials. A reliability test to determine the maximum explosion suppression mechanism dose for a MEMS S&A device attached to a PI film (100-μm-thick) showed that the maximum amount of primer needed for the effective explosion suppression mechanism capability on the MEMS S&A device was 0.45 mg.

The Hybrid Fabrication Process of Metal/Silicon Composite Structure for MEMS S&A Device

“…Nonetheless, because of the manual assembly, the fabrication quality and efficiency are limited. Feng [17] has reported the integration of a MEMS S&A device with different films (silver, copper, nickel, and polyimide), and the experiment results show that the performance of the explosion suppression can be improved greatly. However, the fabrication method proposed by Feng is simply electroplating or coating another film on the silicon structure.…”