Exposure latitude analysis for dense line and space patterns by using diffused aerial image model

Ahn, Chang-Nam; Kim, Hee-Bom; Baik, Ki‐Ho

doi:10.1117/12.389058

Cited by 5 publications

(1 citation statement)

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“…EL oc CAI(A,P) x R(P) (2) ELocA( CAI(A,P)AatBIM) (3) Here, CAI is the contrast of aerial image, R is the function ofresist, A is the efficiency of 1St order light and P is thepitch size of mask pattern. EL is the function of aerial image contrast and resist process.…”

Section: Stmentioning

confidence: 99%

Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography

Ham

Kim

et al. 2001

SPIE Proceedings

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This paper describes that attenuated phase shift masks (APSM) improve process margin compared to binary mask (BIM) in KrF and ArF lithography. We present the real problems to occur in the mask fabrication, process and mask enor factor (MEF). As a result, sub-l2Onm cell patterns were delineated with 8% exposure latitude (EL) and '-O.6 ini local depth of focus (LDOF) using O.7ONA KrF and APSM. The performance of ArF lithography (NA=O.63) shows the similar process margin with 10% EL and O.6 tm LDOF. Using APSM, we could obtain 14.4% EL and -O.6 eni LDOF. We obtained process enhancement of 30% by using APSM. However, process instability is analyzed in a viewpoint of mask making and process issue such as mask fabrication capability, CD uniformity, and MEF. In simulation and experiment, O.63NA ArF lithography shows resolution improvement compared to O.7ONA KrF. It is possible to obtain lOOnm pattern using ArF and APSM. Also, one of common issues is to reduce the MEF, which is decided by exposure and resist process condition. MEF is increased to about 4 or more in the sub-l2Onm range. This effect has influence on CD uniformity and EL margin. Reducing the MEF on the wafer, we have to optimize exposure tool, process, and mask. Shorter wavelength and APSM are one of candidates to minimize MEF. Therefore, ArF APSM is looking forward to high performance lithography.

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Section: Stmentioning

confidence: 99%

Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography

Ham

Kim

et al. 2001

SPIE Proceedings

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Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography

et al. 2001

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This paper describes the feasibility of lOOnm-node lithography using ArF lithography and att-PSM (aUenuated Phase Shift Mask). In the simulation approach, we can find that att-PSM can improve EL window more than 25% compared to BIM (Binary Intensity Mask) in both KrF and ArF lithography. Although the MEF (Mask Error Factor) values of att-PSM and BIM are almost same even in a higher NA region, the total CD variation of aU-PSM is slightly lower than that of BIM because of the increase effect of EL window. Considering the total CD variation, it is necessary to use the ArF lithography machine with higher NA of more than O.7ONA for lOOnm patterning. In the real patterning performance, the ArF lithography and att-PSM can improve EL windows more than 60% in comparison with KrF lithography and att-PSM for sub-l2Onm cell patterns. The case of att-PSM and annular aperture condition, especially small ring width annular condition shows the increasing effect ofprocess windows compared to BIM for lOOnm L/S patterns. For the direct C/H printing below l2Onm feature, we can get about 9% EL window in the case of l2Onm C/H feature. Although we have some technical issues for lOOnm lithography such as the controllability of MEF and EL window extension, the lens quality enhancement for the higher NA and manufacturing defects of att-PSM, etc., there is a sufficient feasibility to obtain lOOnm-node pattern with ArF lithography and att-PSM.

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Quantitative analysis of mask error effect on wafer CD variation in ArF lithography

Kim¹,

Koo²,

Kim³

et al. 2001

SPIE Proceedings

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This paper describes the effect of the mask errors such as mask critical dimension (CD) variation, phase and transmission error of attenuated phase shifting mask (att-PSM) on wafer CD in ArF lithography and also analyzes these errors quantitatively. Mask CD requirement using ELF and MEF is estimated firstly and mask CD should be controlled within about 7nm assuming O.7ONA ArF system with 1% illumination uniformity. Transmission error induces larger CD variation than phase error. However, phase error should be considered otherwise in that it reduces depth of focus (DOF). To control DOF degradation less than 10% in case of O.l4um and O.l6um isolated contact hole(C/H), the phase should be controlled within the range of Considering O.l4um isolated contact hole, transmission error of occupies 10% of CD tolerance. Finally, the budget of these factors are calculated in view of total wafer CD variation quantitatively except lens aberration, resist process, and etc. To reduce wafer CD variation, we should control mask CD more tightly.

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Exposure latitude analysis for dense line and space patterns by using diffused aerial image model

Cited by 5 publications

References 0 publications

Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography

Sub-120-nm technology compatibility of attenuated phase-shift mask in KrF and ArF lithography

Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography

Quantitative analysis of mask error effect on wafer CD variation in ArF lithography

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