Exposure Simulation Model for Chemically Amplified Resists

Kim, Sang-Kon

doi:10.1007/s10043-003-0335-x

Cited by 4 publications

(2 citation statements)

References 9 publications

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“…The PEB temperature is varied from 80 °C to 140 °C. The PEB is done for 60 s, 90 s, and 120 s [5,6]. For the C/H pattern, Ethylvinylether-based polymer is coated and prebaked at 100 °C for 60 seconds.…”

Section: Comparison To Experiments Resultsmentioning

confidence: 99%

Thermal effects study of chemically amplified resist

Kim

2006

SPIE Proceedings

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For the sub-100-nm pattern generation, thermal treatment is one of the new process extension techniques with current day lithography equipment and chemically-amplified resist. The key element to introduce these new techniques is in the understanding of mechanistic behaviors that drive photo resist image rendering. Thermal processes, such as soft bake, post exposure bake, and thermal reflow process, are same thermal processes, but produce different chemical and physical behaviors in the chemically-amplified resist. In this paper, those thermal processes are described and modeled for the property change of a positive type 193 nm chemically amplified resist. Those simulated results agree well with experimental results. Those thermal effects move the boundaries of resist bulk images to a center point and make these boundaries dense. Due to pattern types, the thermal reflow process technology and the overbake and underbake technologies of soft bake and post exposure bake can be used for the 45 nm critical dimension. Combining the benefits of thermal processes becomes possible to produced the below 45 nm critical dimension.

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Section: Comparison To Experiments Resultsmentioning

confidence: 99%

Thermal effects study of chemically amplified resist

Kim

2006

SPIE Proceedings

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“…where (¼ A½PAGðx; y; z; tÞ þ B) is the optical absorption coefficient, A, B, and C are Dill's parameters, [A] is the acid concentration, and E is energy. After the reflectance and the transmittance of thin film optics are calculated using Berning's theory, 15,17,[20][21][22] two-dimensional (2D) and 3D bulk images of PAG concentration without and with cured patterns are different, as shown in Figs. 2(c) and 2(i).…”

Section: Modeling Of Lcle Processmentioning

confidence: 99%

Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Kim

2012

Jpn. J. Appl. Phys.

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Semiconductor manufacturing has depended on the high resolution of optical lithography. As the wavelength becomes shorter for the resolution, the light source and optics become increasingly complex and expensive. Therefore, to extend optical lithography's useful life at greater resolution, the litho–cure–litho–etch (LCLE) process has been introduced as an alternative technique. In this study, the LCLE process is modelled and simulated to explore the pattern formation between the two lithography processes (litho 1 and litho 2). This process allows for the physical phenomena of pattern formation to be better understood. The sensitivity of simulation parameters for simulated profiles is analyzed by Taguchi analysis. Through the sensitivity of these easy-to-optimize parameters, LCLE lithography processes can be effectively predicted.

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Orthogonal Functional Method for Optical Proximity Correction of Thermal Processes in Optical Lithography

Kim¹

2007

jjap

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The patterning of very small features is a difficult challenge for current lithography technology. The thermal process is an easy and simple solution involving no any additional processes. This process is one of extension techniques for 248 nm KrF and 193 nm ArF lithography equipment and chemically amplified resists (CARs). However, thermal effects are severe, thus, more critical approaches are needed for small pattern formation. In this paper, thermal processes are described and modelled for evaluating property changes in 248 and 193 nm CARs. The simulated results agree well with experimental results. Those processes can be used to shrink not only contact hole patterns but also space patterns. For the optical proximity correction (OPC) of thermal effects, an orthogonal functional method is introduced. These orthogonal functions depend on pattern types such as contact holes and spaces. By using this method, underbaked postexposure bake and thermal reflow are performed for the below-45-nm contact hole pattern for a 248 nm KrF CAR and the 32 nm contact hole pattern for a 193 nm ArF CAR. Thus, an orthogonal functional method is useful for carrying out the OPC for thermal effects.

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Exposure Simulation Model for Chemically Amplified Resists

Cited by 4 publications

References 9 publications

Thermal effects study of chemically amplified resist

Thermal effects study of chemically amplified resist

Sensitivity of Process Parameters on Pattern Formation of Litho–Cure–Litho–Etch Process

Orthogonal Functional Method for Optical Proximity Correction of Thermal Processes in Optical Lithography

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