Extended defects in bulk GaN and III-nitrides grown on this substrate

Liliental‐Weber, Z.

doi:10.1016/j.jcrysgro.2010.04.019

Cited by 5 publications

(4 citation statements)

References 42 publications

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“…By using electron energy loss spectroscopy (EELS) the authors showed that these precipitates are Ga precipitates, similarly as observed in the platelet crystals. 20,51) They are not longer semi-spherical as in the platelet crystals and elongation of these precipitates along c-axis most probably is related to the directionality of the growth.…”

Section: High Pressure Growth On Hvpe Substratementioning

confidence: 99%

“…The arms of this loop will form threading dislocations. 20) Such defects are called line defects. One can distinguish perfect and partial dislocations.…”

Section: Dislocations In Gan Grown On Sapphirementioning

confidence: 99%

“…2. 20) However, Tachikawa and Yamaguchi 23) and later Speck et al 24) proposed a model adapted from Sheldon et al 25) used for cubic materials and showed that density of threading dislocations in relatively thick layers is inversely proportional to the film thickness. This model was also applied by Jasinski et al 21) to analyze cross-sectional TEM results on HVPE GaN layers and found that the density of dislocations decreases from 9 © 10 9 cm ¹2 for the sample thickness of 1.5 µm, shown in Fig.…”

Section: Dislocations In Gan Grown On Sapphirementioning

confidence: 99%

“…CBED study showed that the flat side of the crystal grew with N polarity and the rough side with Ga polarity. 20,[51][52][53] TEM studies of the cross-section of the platelet crystals showed formation of planar defects in the subsurface of the rough side of the platelet. These planar defects did not extend more than 1/10 to 1/4 of the plate thickness.…”

Section: Bulk "Platelet" Gan Crystalsmentioning

confidence: 99%

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Structural defects in GaN revealed by transmission electron microscopy

Liliental‐Weber

2014

Jpn. J. Appl. Phys.

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This paper reviews the various types of structural defects observed by transmission electron microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by high nitrogen pressure solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

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Section: High Pressure Growth On Hvpe Substratementioning

confidence: 99%

“…The arms of this loop will form threading dislocations. 20) Such defects are called line defects. One can distinguish perfect and partial dislocations.…”

Section: Dislocations In Gan Grown On Sapphirementioning

confidence: 99%