Extended defects in epitaxial Sc2O3 films grown on (111) Si

Klenov, Dmitri O.; Edge, L. F.; Schlom, D. G.; Stemmer, Susanne

doi:10.1063/1.1857068

Cited by 42 publications

(33 citation statements)

References 21 publications

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“…For comparison, RE oxide heterostructures based on the bixbyite structure match the Si substrate on the basis of a ͑2 ϫ 2͒ coincidence lattice with consequent low cation ordering symmetry, making the epitaxial RE 2 O 3 films susceptible for the formation of gAPB as well as cAPB defects. 9,11,12 …”

Section: Introductionmentioning

confidence: 99%

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Giussani

Seifarth

Rodenbach

et al. 2008

Journal of Applied Physics

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A combined structure and stoichiometry study on the growth behavior of single crystalline Ge(111) layers on PrO2(111)∕Si(111) heterostructures is presented. Ex situ x-ray diffraction techniques indicate that the interaction between Ge and PrO2(111) results in a complete reduction of the buffer oxide to a cubic Pr2O3(111) film structure. In situ reflection high energy electron diffraction, x-ray and ultraviolet photoelectron spectroscopy studies demonstrate that this chemical reduction of the oxide support occurs during the initial Ge growth stage. The interaction of PrO2 with Ge results in the formation of an amorphous Ge oxide layer by the diffusion of lattice oxygen from the dielectric to the forming semiconductor deposit. After the complete conversion of PrO2 to cubic Pr2O3, the supply of reactive lattice oxygen is exhausted and the continuous Ge deposition reduces the initially formed amorphous GeO2-like film to GeO. The sublimation of volatile GeO uncovers the single crystalline cubic Pr2O3(111) film surface which provides a thermodynamically stable template for elemental Ge heteroepitaxy. A Volmer–Weber growth mode is observed which results after island coalescence in the formation of atomically smooth, single crystalline Ge(111) layers.

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Section: Introductionmentioning

confidence: 99%

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Giussani

Seifarth

Rodenbach

et al. 2008

Journal of Applied Physics

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“…7͒ and a k value ͑ϳ13͒, 8 suitable for these applications. 9 In flotox memories, the insulator is sandwiched between the poly-Si gates 10 and is called inter-poly-Si dielectric ͑IPD͒. In charge trap memories, the insulator or blocking oxide ͑BO͒ lies in contact with a silicon nitride trapping layer and a p-type metal.…”

Section: Introductionmentioning

confidence: 99%

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Feijoo

Prado

Toledano-Luque

et al. 2010

Journal of Applied Physics

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Scandium oxide (ScOx) thin layers are deposited by high-pressure sputtering (HPS) for physical and electrical characterization. Different substrates are used for comparison of several ScOx/Si interfaces. These substrates are chemical silicon oxide (SiOx), H-terminated silicon surface and silicon nitride (SiNx), obtained by either electron-cyclotron-resonance chemical vapor deposition or plasma enhanced nitridation of the Si surface. Transmission electron microscopy images show that a 1.7 nm thick SiOx layer grows when ScOx is deposited on H-terminated silicon surface. We demonstrate that interfacial SiNx has some advantages over SiOx used in this work: its permittivity is higher and it presents better interface quality. It also avoids Si oxidation. An improvement of one order of magnitude in the minimum of interface trap density is found for SiNx with respect to the SiOx, reaching values below 2×1011 cm−2 eV−1. HPS deposited ScOx films are polycrystalline with no preferential growth direction for the used deposition conditions and their properties do not depend on the substrate. This material could be a candidate for high-k material in flash memory applications.

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“…APBs are disadvantageous in the field of heteroepitaxy, as reported for other oxide films. 10 These disadvantages are avoided by PrO 2 films since PrO 2 has fluorite structure and is lattice matched to Si ͑lattice mismatch −0.7%͒.…”

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confidence: 99%

Epitaxy of single crystalline PrO2 films on Si(111)

Weisemoeller

Deiter

Bertram

et al. 2008

Applied Physics Letters

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A film of praseodymium sesquioxide with hexagonal structure, that has been deposited on Si͑111͒ by molecular beam epitaxy, was annealed in oxygen atmosphere to obtain a PrO 2 film for improved heteroepitaxy as buffer dielectric for alternative semiconductor layer integration. The film structure is characterized by x-ray diffraction and x-ray reflectometry. The film is single crystalline with Fm3m ͑fluorite͒ structure. It is B oriented with respect to Si and has lattice constants close to bulk PrO 2 . The cubic lattice of the PrO 2 film is slightly distorted due to residual oxygen vacancies which increase the diameter of Pr ions.

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Extended defects in epitaxial Sc2O3 films grown on (111) Si

Cited by 42 publications

References 21 publications

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

Epitaxy of single crystalline PrO2 films on Si(111)

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