Extension of Ramo's theorem as applied to induced charge in semiconductor detectors

Cavalleri, G.; Gatti, E.; Fabri, G.; Svelto, V.

doi:10.1016/0029-554x(71)90235-7

Cited by 174 publications

(54 citation statements)

References 14 publications

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“…A possible explanation for the large CCE could be that by accident the ∼ 1µA injected by the forward bias over a small area of the detector caused a space charge compensation which lowered the necessary depletion voltage as explained in the previous section. However, we have no explanation for the discrepancy between the n and p-side CCE, which is inconsistent with Ramo's theorem [16]. …”

Section: Reverse Bias Operation With Charge Injectioncontrasting

confidence: 93%

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

Borer¹,

Jánoš²,

Palmieri³

et al. 2000

Nuclear Instruments and Methods in Physics Research Section A:

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This paper presents results on the measurement of the cluster shapes, resolution and charge collection efficiency of a double sided silicon microstrip detector after irradiation with 24 GeV protons to a fluence of 3.5 × 10 14 p/cm 2 and operated at cryogenic temperatures. An empirical model is presented which describes the expected cluster shapes as a function of depletion depth, and is shown to agree with the data. It is observed that the clusters on the p-side broaden if the detector is under-depleted, leading to a degradation of resolution and efficiency. The model is used to make predictions for detector types envisaged for the LHC experiments. The results also show that at cryogenic temperature the charge collection efficiency varies depending on the operating conditions of the detector and can reach values of 100% at unexpectedly low bias voltage. By analysing the cluster shapes it is shown that these variations are due to changes in depletion depth. This phenomenon, known as the "Lazarus effect", can be related to similar recent observations on diode behaviour.2

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Section: Reverse Bias Operation With Charge Injectioncontrasting

confidence: 93%

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

Borer¹,

Jánoš²,

Palmieri³

et al. 2000

Nuclear Instruments and Methods in Physics Research Section A:

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“…The signal is than (Ramo's theorem [6]) dominated by the motion of electrons rather than holes. We observe signals similar as reported by ref.…”

Section: Experimental Methodsmentioning

confidence: 96%

Analysis of trapping and detrapping in semi-insulating GaAs detectors

Rogalla

Eich

Evans

et al. 1997

Nuclear Instruments and Methods in Physics Research Section A:

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To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2 + is the dominant electron trap in semi-insulating GaAs.

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“…18 It can also be extended to charges moving in insulators 19 . In contrast, the relation between our problem and the SR-type treatment of charge detectors can be described as a mapping rather than merely an application of the SR approach to yet another system.…”

Section: Mapping To the Shockley-ramo Problemmentioning

confidence: 99%

Shockley-Ramo theorem and long-range photocurrent response in gapless materials

Song

Levitov

2014

Phys. Rev. B

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Scanning photocurrent maps of gapless materials, such as graphene, often exhibit complex patterns of hot spots positioned far from current-collecting contacts. We develop a general framework that helps to explain the unusual features of the observed patterns, such as the directional effect and the global character of photoresponse. We show that such a response is captured by a simple ShockleyRamo-type framework. We illustrate this approach by examining specific examples, and show that the photoresponse patterns can serve as a powerful tool to extract information about symmetry breaking, inhomogeneity, chirality, and other local characteristics of the system.

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Extension of Ramo's theorem as applied to induced charge in semiconductor detectors

Cited by 174 publications

References 14 publications

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

Charge collection efficiency and resolution of an irradiated double-sided silicon microstrip detector operated at cryogenic temperatures

Analysis of trapping and detrapping in semi-insulating GaAs detectors

Shockley-Ramo theorem and long-range photocurrent response in gapless materials

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