Extracting accurate capacitance voltage curves from impedance spectroscopy

Guenther, Kay-Michael; Witte, Hartmut; Krost, A.; Kontermann, Stefan; Schade, Wolfgang

doi:10.1063/1.3679380

Cited by 12 publications

(8 citation statements)

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“…The barrier height on the control sample is 0.59 eV, which is in agreement with the historical value for Al on p-type Si, 0.58 eV [13]. The barrier height can also be determined with C-V measurements, in which the capacitance of a sample is determined through the measured impedance using a suitable equivalent circuit [15]. However, it has been shown that C-V measurements with a single alternating-current (AC) frequency often produce inaccurate results, and multiple-frequency measurements should be used to account for series resistances [16].…”

Section: A Al/s-passivated N-type Si(100) Junctionssupporting

confidence: 54%

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Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation

et al. 2014

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Chemical vapor deposition based sulfur passivation using hydrogen sulfide is carried out on both n-type and p-typeSi(100) wafers. Al contacts are fabricated on sulfur-passivated Si(100) wafers and the resultant Schottky barriers are characterized with current-voltage (I-V), capacitance-voltage (C-V) and activation-energy methods. Al/S-passivated n-type Si (100) junctions exhibit ohmic behavior with a barrier height of less than 0.078 eV by the I-V method and significantly lower than 0.08 eV by the activation-energy method. For Al/S-passivated p-type Si(100) junctions, the barrier height is ~0.77 eV by I-V and activation-energy methods and 1.14 eV by the C-V method. The discrepancy between C-V and other methods is explained by image-force induced barrier lowering and edge-leakage current. The I-V behavior of an Al/S-passivated p-type Si(100) junction remains largely unchanged after 300°C annealing in air.It is also discovered that heating the S-passivated Si(100) wafer before Al deposition significantly improves the thermal stability of an Al/S-passivated n-type Si(100) junction to 500°C.

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Section: A Al/s-passivated N-type Si(100) Junctionssupporting

confidence: 54%

“…5 yield the C-V curve and thus the barrier height for the front Al contact [15]. The capacitance is extracted from the maxima using the following equations [15] = −2 (2)…”

Section: B Al/s-passivated P-type Si(100) Junctionsmentioning

confidence: 99%

Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation

et al. 2014

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“…Subsequently, possible deviations from this ideal relationship are discussed. Also the publication of Guenther et al [59], that introduces a more re ned approach of extracting the actual capacitance of the depletion layer from the immittance data, does ignore the contribution of defects (though, they assume that their approach should still work when defects are recognised). system are dominated by defects at the interface or in the insulator.…”

Section: Insights From Conventional Capacitance-voltage Analysismentioning

confidence: 99%

“…To extract the capacitance for a subsequent capacitance-voltage analysis, it is quite common to interpret the system as a two component circuit consisting of one resistor and one capacitor [59]. There are two possible arrangements of the circuit elements: in series or parallel.…”

Section: Differences To the Conventional Characterisation Of Mos Stru...mentioning

confidence: 99%

“…Sometimes an addition serial resistance is included to enhance the description, which can result in more accurate extracted capacitances [138, pp. 222-226], [59]. If an additional serial resistance to the parallel arrangement is introduced in the conventional approach, at all, it is assumed to be ideal, i. e. not dependent on voltage and without parallel capacitive bypass.…”

Section: Differences To the Conventional Characterisation Of Mos Stru...mentioning

confidence: 99%

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A novel approach of immittance-spectra analysis and how it resolves a decade-old deviation of the Frenkel-Poole model

Amani¹

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As already indicated above, this work focuses primarily on the development of a novel method to analyse experimentally obtained immittance spectra by using process-speci c physical models dependent on external parameters. Ultimately, this allows the extraction of process-speci c parameters which are inherently linked to a physical meaning (e. g. an acceptor concentration or a barrier height, instead of a resistance or a capacitance) and can, hence, be better compared between experiments. Furthermore, the introduction of models with dependence on external parameters eliminates circuit ambiguity which, as can be seen in Figure 1.1, also improves the comparability between di ferent experiments. Moreover, the regions of importance for the respective processes are automatically weight by the parameter-dependence of the models. Additionally, external-parameter dependence enhances the association of circuit components with distinct pieces of the system under investigation and reduces the absorption of deviations, e. g. by an incomplete model on one piece, into the t parameters of another piece. Finally, if the same underlying physical properties are present in di ferent models for the same piece they may be shared and, consequently, tted jointly, even between capacitive and resistive properties.The application of this novel approach on samples with ta-C lms on p-type silicon substrates, with di ferent doping concentration, is only an example. However, as explained below, a carefully chosen one.The analysis of depletion layers in silicon, usually in form of capacitance-voltage measurements, is probably one of the most common applications of immittance spectroscopy in semiconductor physics. In comparison to many other systems investigated by immittance spectroscopy, which often rely on empiric models, depletion layers are relatively well-investigated and -understood phenomena which have theory-based models [138][176, pp. 245-297]. The latter is not only true for the capacitance of a depletion layer, but also for its resistance-voltage characteristic, i. e. its static current-voltage relation [176, pp. , 245-286]. As already explained, the novel approach in this work is based on introducing physical models dependent on external parameters. In the case of the depletion layer, both resistive and capacitive properties are dependent on the external parameter voltage and both models are based on microscopic assumptions (which is what is meant in this work by physical model dependent on external parameters). Voltage-dependent immittance spectra, as those obtained in this work, not only contain the capacitancevoltage information, but also the full resistance-voltage characteristic. Furthermore, the higher number of frequencies in the approach introduced in this work as compared to conventional capacitance-voltage analysis (often only one high-and one low-frequency measurement are performed [138, pp. 321-333, 388-389]) allows distinguishing and potentially identifying di ferent serial parts in the system. This allows identifying...

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Get 107-2019 Special State Primary Standard of the Unit of Electrical Capacitance in the Frequency Range from 1 to 300 MHz

et al. 2022

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Extracting accurate capacitance voltage curves from impedance spectroscopy

Cited by 12 publications

References 13 publications

Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation

Characterization of Al/Si junctions on Si(100) wafers with chemical vapor deposition-based sulfur passivation

A novel approach of immittance-spectra analysis and how it resolves a decade-old deviation of the Frenkel-Poole model

Get 107-2019 Special State Primary Standard of the Unit of Electrical Capacitance in the Frequency Range from 1 to 300 MHz

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