Extracting Metal Contact Recombination Parameters From Effective Lifetime Data

Dumbrell, Robert; Juhl, Mattias K.; Trupke, Thorsten; Hameiri, Ziv

doi:10.1109/jphotov.2018.2861761

Cited by 26 publications

(11 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Sinton lifetime tester (WCT-120TS) is used to measure τ eff as a function of temperature (25 C to 80 C). 40 J 0s is extracted from the τ eff curves using the curve fitting features of Quokka 2 41 and the approach of Dumbrell et al 42 The uncertainty in the extracted J 0s is calculated from the uncertainty of photoconductance measurements using the approach of McIntosh et al 43 The models of Schenk, 44 Richter et al 45 and Klaassen 46 are used to determine the effective intrinsic carrier concentration (n i,eff ), the intrinsic lifetime and the mobility, respectively. rent density (J sc ) increases at elevated temperatures.…”

Section: Characterizationmentioning

confidence: 99%

Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts

Dréon

Michel

et al. 2021

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

The temperature coefficient (TC) is an essential figure of merit to accurately evaluate solar cell performance at various operating temperatures, and hence, enabling the comparison between different cell technologies. Recently, solar cells that use passivating contacts based on transition metal oxide (TMO) layers have attracted much attention due to their excellent performance. Therefore, knowledge of their TCs and insights into their performance at various operating temperatures are of significant interest.In this study, we investigate the temperature-dependent performance of solar cells with TMObased passivating contacts at various illumination intensities. We then compare their performance to that of standard silicon heterojunction (SHJ) solar cells. The efficiency TC (TCη) of solar cells that use passivating contacts based on molybdenum oxide (MoOx) and titanium oxide (TiOx) films are found to be almost identical. Both outperform the TCη of the standard SHJ cells and are greatly superior to those of cell structures without passivating contacts. The superior TCη of the MoOx-based cells is mainly due to their favourable TCs of the short-circuit current density (TCJsc) and fill factor (TCFF), whereas the superiority of TCη of the TiOx-based cells is solely resulting from the superior TCFF. The favourable TCJsc of the MoOx-based cells is explained by an enhanced spectral response at short wavelengths with increasing temperature, due to the improvement of the passivation quality of the MoOx-based passivating contacts. The beneficial TCFF of both solar cells are partly resulting from the improvement of the contact resistivity of the TMO-based passivating contacts which counterbalances some of the fill factor losses at elevated temperatures. Although an improvement of the passivation quality of the TMO-based passivating contacts is observed at elevated temperature, it does not have a strong impact on the TC of the open-circuit voltage of the investigated solar cells. Furthermore, we also found that the studied cells are less sensitive to temperature variation at higher illumination intensities.

show abstract

Section: Characterizationmentioning

confidence: 99%

Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts

Dréon

Michel

et al. 2021

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

show abstract

“…Charge‐carrier trapping effects were observed in quasi steady state (QSS) photoconductance measurements carried out on these wafers. PL images were therefore calibrated into Δ n images and subsequently i V OC images using QSS‐PL front detection measurements, 11,34 since QSS‐PL measurements are not affected by trapping 35 . The temperature‐dependent i V OC is then calculated as follows:

normali V_{normalO C_{xy}} ((), T) goodbreak= \frac{kT}{q} \ln ((), \frac{P L_{xy} (T)}{A_{normali} (T) B (T) n_{normali} {((), T)}^{2}})

where PL xy is the PL intensity at pixel (x,y), A i is the calibration constant (more details regarding the calibration procedure can be found in Nie et al 11 ), and B is the radiative recombination coefficient 36,37 .…”

Section: Methodsmentioning

confidence: 99%

“…Charge-carrier trapping effects were observed in quasi steady state (QSS) photoconductance measurements carried out on these wafers. PL images were therefore calibrated into Δn images and subsequently iV OC images using QSS-PL front detection measurements, 11,34 since QSS-PL measurements are not affected by trapping. 35 The temperature-dependent iV OC is then calculated as follows:…”

Section: Pl Imagingmentioning

confidence: 99%

Temperature sensitivity maps of silicon wafers from photoluminescence imaging: The effect of gettering and hydrogenation

Nie¹,

Chin²,

Soufiani³

et al. 2022

Progress in Photovoltaics

Self Cite

View full text Add to dashboard Cite

The operating temperature has a critical impact on the electrical performance of solar cells. It has been shown that the temperature coefficient is not uniform across devices and often varies between different regions due to the inhomogeneous distributions of defects. In this study, temperature‐dependent photoluminescence imaging measurements are used to assess the influence of different processes such as gettering, firing and advanced hydrogenation on the temperature‐dependent electrical performance of cast‐mono silicon wafers. It is found that the height of the wafer within the ingot impacts the response of the temperature coefficient to different fabrication processes. Advanced hydrogenation is found to reduce the temperature sensitivity, more than expected solely from the improvement in implied open‐circuit voltage. Crystallographic defects are found to be the least temperature sensitive regions, indicating that their detrimental impact is reduced at higher operating temperatures. The interesting low temperature sensitivity in the defective regions is further investigated using hyperspectral photoluminescence imaging measurements and atom probe tomography. It is suggested that the reduced sensitivity is due to impurities decorating crystallographic defects.

show abstract

“…Thus, our evaluation uses a Δn average , which may significantly underestimate our J 0,Met,textured . [23,24] Finally, the values for J 0,Met and ρ c for sample groups B and C are summarized in Figure 5b.…”

Section: Passivationmentioning

confidence: 99%

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Glatthaar

Huster

Okker

et al. 2022

Physica Status Solidi (a)

View full text Add to dashboard Cite

One of the main challenges for the industrialization of the passivating contact approach for Si solar cells is the metallization with screen‐printed paste while maintaining the low saturation current density. Using a non‐commercial Ag paste to metallize atmospheric pressure chemical vapor deposition (APCVD) (n) poly‐Si, the metal contact formation for passivating contacts on planar and textured substrates is investigated. The paste creates deep imprints caused by silver crystallite formation at the pyramid tips of textured silicon wafers. In contrast, on planar wafers, the silver crystallite growth stops at the interface between poly‐Si and the Si wafer. Similar contact resistivities are determined by comparing textured and planar Si samples. On planar samples, a contact resistivity of 4.6(14) mΩcm2 and a saturation current density of only 141(10) fA cm−2 for the metallized contact area are demonstrated. Textured samples with a contact resistivity of 2.7(17) mΩcm2 show a higher saturation current of 480(40) fA cm−2. This etching behavior is investigated by structural and elemental analyses using scanning electron microscopy.

show abstract

Extracting Metal Contact Recombination Parameters From Effective Lifetime Data

Cited by 26 publications

References 26 publications

Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts

Temperature‐dependent performance of silicon heterojunction solar cells with transition‐metal‐oxide‐based selective contacts

Temperature sensitivity maps of silicon wafers from photoluminescence imaging: The effect of gettering and hydrogenation

Contact Formation of Silver Paste and Atmospheric Pressure Chemical Vapor Deposition (n) Poly‐Silicon Passivating Contacts on Planar and Textured Surfaces

Contact Info

Product

Resources

About