Extracting of substrate network resistances in RFCMOS transistors

Tabrizi, Mohammad Moghaddam; Fathi, Ehsan; Fathipour, Morteza; Masoumi, Nasser

doi:10.1109/smic.2004.1398207

Cited by 3 publications

(1 citation statement)

References 10 publications

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“…The DNW layer forms a capacitive coupling path in the substrate, which exists no matter what the electrical configuration is. Furthermore, most previous works [7][8][9][10][11][12][13][14][15][16][17][18][19] dealt with substrate parasitic effects in RF MOSFETs by using resistance networks only. The capacitive coupling effect, which is physically in existence, is always neglected.…”

Section: Introductionmentioning

confidence: 99%

A Scalable Model of the Substrate Network in Deep n-Well RF MOSFETs with Multiple Fingers

Liu¹,

Condon²

2011

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A novel scalable model of substrate components for deep n-well (DNW) RF MOSFETs with different number of fingers is presented for the first time. The test structure developed in [1] is employed to directly access the characteristics of the substrate to extract the different substrate components. A methodology is developed to directly extract the parameters for the substrate network from the measured data. By using the measured two-port data of a set of nMOSFETs with different number of fingers, with the DNW in grounded and float configuration, respectively, the parameters of the scalable substrate model are obtained. The method and the substrate model are further verified and validated by matching the measured and simulated output admittances. Excellent agreement up to 40 GHz for configurations in common-source has been achieved

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