Extraction and Analysis of Noise Parameters of On Wafer HEMTs up to 26.5 GHz

Caddemi, Alina; Crupi, Giovanni; Macchiarella, A.; Macucci, Massimo; Basso, Giovanni

doi:10.1063/1.3140549

Cited by 2 publications

(4 citation statements)

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“…5): an extrinsic part consisting of elements assumed to be bias independent and an intrinsic part consisting of bias dependent elements. To reproduce also the noise FET properties, an equivalent temperature is associated to each resistor [7,8].…”

Section: Model Extractionmentioning

confidence: 99%

“…Determination and validation of an accurate microwave small signal and noise model for microwave solid state devices is mandatory for optimizing the design of reliable low-noise amplifiers operating in the microwave frequency range [1][2][3][4][5][6][7][8][9][10][11][12]. For that reason, we report here on measurements of scattering (S-) parameter and 50 X noise figure, respectively up to 50 GHz and 26.5 GHz, for on wafer AlGaAs/GaAs HEMTs with different gate width.…”

Section: Introductionmentioning

confidence: 99%

“…A circuit model is extracted to reproduce the measured behavior of the investigated devices. In particular, it should be pointed out that the extension of the model with the nonquasi-static effect associated to the gate-drain resistance and its associated temperature is necessary for obtaining a good agreement between model simulations and measurements at such high frequencies [7,8,11,12].…”

Section: Introductionmentioning

confidence: 99%

“…This characteristic can be achieved without complicated algorithms or data processing like intelligent antennas [1][2][3]. Active retrodirective structures give a new perspective for applications, such as RFID, radio communications, and radar systems, providing better and cheaper solutions for new radio systems [4][5][6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

On the noise measurements and modeling for on wafer HEMTs up to 26.5 GHz

Caddemi¹,

Crupi²

2010

Micro & Optical Tech Letters

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In conclusion, we put forward a four-channel fiber ring-down pressure sensor with temperature compensation based on neural networks. Using time-division multiplexing principle, this sensor consists of four fiber ring-down loops whose structure is characterized by a combination of series and parallel connection. Its feasibility has been proved by experiment, which shows its good performance both for time-division multiplexing detection and for removing disturbance of temperature. In addition, considering multimode fiber dispersion in optical fiber, we have also discussed the maximum number of multiplexed channels available in this multiplexing system. The idea of the four-channel fiber ring-down pressure sensor with neural networks makes ring-down detection technology more practical and efficient and can be used in other fields, such as physiological processes involving several biological parameters.

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Section: Model Extractionmentioning

confidence: 99%