Extraction of device noise sources from measured data using circuit simulator software

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

“…The first step is de-embedding of the transistor intrinsic noise parameters from the noise parameters of the whole device. For that purpose, each of three developed extraction methods uses different noise deembedding procedure [19][20][21][22][23], and all the used de-embedding procedures will be explained bellow. The second step is the same in all three cases and represents determination of the noise wave temperatures from the de-embedded intrinsic noise parameters using the Eqs.…”

“…The starting point of this de-embedding procedure is to represent the transistor in a circuit simulator with its S and noise parameters [22]. After that, the extrinsic equivalent circuit elements are added with the negative values and in the reverse order than in the case of transistor equivalent circuit shown in Fig.…”

“…1, with the aim to cancel their noise influence, Fig. 4 [22]. In this way, by simulating the resulting schematic, the noise parameters corresponding to the transistor intrinsic circuit are determined.…”

“…Hence, it would be useful to develop certain extraction procedures that would provide more efficient determination of these temperatures. Moreover, because in the case of noise wave model there are closed form expressions relating the noise wave temperatures and the noise parameters of transistor intrinsic circuit [2], the optimization procedures can be avoided by applying the de-embedding procedures to determine the intrinsic noise parameters from the measured transistor noise parameters [19][20][21][22][23], and further calculation of the noise wave temperatures.…”

“…The presented methods provide de-embedding of the noise parameters of transistor intrinsic circuit from the measured transistor noise parameters and further straightforward extraction of the transistor noise wave temperatures. All of these extraction methods are based on different noise de-embedding procedures: analytical procedure, procedure within a microwave circuit simulator and procedure using artificial neural networks (ANNs) [19][20][21][22][23]. In order to determine which of these extraction methods is the most suitable for the transistor noise modeling, they are applied to a specific GaAs HEMT component, and the obtained results are used for the comparative analysis of the presented extraction procedures.…”