EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

Abstract

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as C g , C gd , and C gs , were directly and indirectly extracted combining small-signal analysis and DC characterization.

Nonlinear Electro-Thermal Monte Carlo Device Simulation

“…In the case of small-signal simulation, it can be assumed that the applied AC signal doesn't have a significant effect on the temperature maps of the device. Hence, the electrothermal simulations from the previous section can be used to generate small signal RF device characteristics as in [92,93].…”