Extraction of mobility degradation, effective channel length and total series resistance of NMOS at elevated temperature

Abstract

This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25"C-125 "C of NMOS device .The relation of Ins and VGS in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5xlO-1o m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Q-Ilm/"C. The errors between the predicted model and measured of Ins& VGS in linear region is approximately 3 %

An Analytical Study Of Temperature Dependence of Scaled CMOS Digital Circuits Using α-Power MOSFET Model

“…μ eff is the effective mobility dependent on the gate voltage given by: (5) where θ is the mobility degradation coefficient, μ 0 is the low field mobility, V gs is the gate to source voltage and V th is the threshold voltage. In the presence of parasitic resistance, θ can be expressed [15] as: Journal of Integrated Circuits and Systems 2016; v.11 / n.1:57-68 (6) Here, β 0 is the value against maximum device transconductance.…”