This paper proposes a novel hybrid energy storage system (HESS) for the regenerative braking system (RBS) of the front‐wheel induction motor‐driven battery electric vehicle. The HESS is an amalgamation of multiple hybrid supercapacitors (HSCs) and lithium‐ion battery cells. An artificial neural network (ANN)‐based RBS control mechanism was used to optimize the switching scheme of the RBS's three‐phase inverter and the vehicular breaking force distribution. In the regenerative braking mode, the ANN‐based HSC/battery RBS transferred the braking energy to be stored in the HSC and, upon reaching the HSC's maximum safety threshold, then to the battery. In addition, the RBS control mechanism could achieve uniform braking force distribution between the front and rear wheels of the vehicle. Furthermore, our findings revealed that the experimental HSC/battery RBS program enhanced the harvesting of the regenerative braking energy, as was evident from the longer driving distance vis‐à‐vis that of the battery‐only vehicle. The HSC/battery RBS also contributed to improved vehicle acceleration and an extended battery life. © 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.

The CMOS fabrication technology requires both nchannel (NMOS) and p-channel (PMOS) transistors be built on the same substrate. To ensure the reliability of the circuit performance over the temperature range, the circuits must be designed accommodate the basic variations parameters as a function of parameter. The temperature dependence of the MOSFET parameters as well as the small dimension effects on the dc characteristics of submicrometer CMOS inverters operated over the temperature range of 27-125 degree Celsius are presented. The results show that the threshold voltage temperature coefficient (TCV) of both devices increased as the channel width decreased. PMOS has a larger affect more than NMOS because of a buried channel device. The Voltage Transfer Characteristics (VTC) of an inverter shows a symmetrical gate at W R is 2.0. However, the narrow channel effect, threshold voltage matching and ratio B R are key problem of CMOS inverter worked. Finally, these results will support the process engineer, circuit designer to improve device performance in the next fabrication.

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This article describes the extraction of total series resistance, effective channel length and low field effective channel mobility degradation parameter at temperature in the range of 25"C-125 "C of NMOS device .The relation of Ins and VGS in a linear region was used with a different of channel length. The procedure is based on the measurement of the transconductance characteristics of MOSFET in the linear region. The transconductance characteristics is determine for the several devices of difference drawn channel length. The results shows that, the effective channel length is increased in a range of 5xlO-1o m/°C. The low field mobility degradation parameter is decreased by the factor of 0.733. The total series resistance is increased in the range of 1.4 Q-Ilm/"C. The errors between the predicted model and measured of Ins& VGS in linear region is approximately 3 %

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