Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation

Lee, Shiuh-Wuu

doi:10.1016/0038-1101(90)90184-g

Cited by 20 publications

(7 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By contrast, traditional methods [2], [4] entail an extrapolation of the drain current characteristics at low drain-source potential, to a "threshold" voltage whose definition is neither well defined nor unique [8], thereby resulting in various inconsistencies. These, and other, derivative methods [14]- [17], have thus left unresolved the physical origins of the "universality" of mobility curves, among various related observations. The method implemented below sidesteps such inaccuracies and inconsistencies as incurred by the latter methods, by setting forth the objective criterion (D2 ≈ D3 ≈ 0) for determining the mean electric field E*T across the inversion layer from measurements of ψ*.…”

Section: An Accurate Methods For Measuring the Mean Potential (ψ*) An...mentioning

confidence: 99%

“…For a given value of ID, µ eff is then the only unknown quantity in (23), which is thereby deduced readily from standard measurements. We note that, as simplification (a) above sets µ eff (E*T) = µ eff in (23), the value of E*T corresponding to a given ID, which is essential to the determination of the function µ eff (E*T), is variously assumed to be an "average" [2], or an "effective" [2], [4], [14], value [14], η = 1/3 for holes [4], with Qi (corrected [17]), and Qb, the total inversion and bulk charges, respectively.…”

Section: Conductivity Mobility and The Charge Sheet Modelmentioning

confidence: 99%

See 1 more Smart Citation

Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field

Shoucair¹

2022

Preprint

View full text Add to dashboard Cite

The salient properties of charge flow (or current) along the MOSFET’s inversion layer are shown to be analogous to a river’s flow in a gravitational potential field, insofar as both are fundamentally governed by energy conservation principles, and their laminar and turbulent conditions determined by friction losses at shallow depths. We formulate an accurate model for a non–uniform mobile charge density giving rise to a mean potential across an inversion layer of finite extent, which we measure by a sensitive experimental method …

show abstract

Section: An Accurate Methods For Measuring the Mean Potential (ψ*) An...mentioning

confidence: 99%

Section: Conductivity Mobility and The Charge Sheet Modelmentioning

confidence: 99%

Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field

Shoucair¹

2022

Preprint

View full text Add to dashboard Cite

show abstract

“…Equating the inversion charge of the sheet model, Qi(ψs) per (6), to that posited by (10) and by the Stern-Howard model, for an inversion layer of finite extent z max ≈ (3/𝛽) (see Appendix): For 0 ≤ m(E*T) ≤ 1, the parameter η is thus expected to vary continuously between (1/2) and (1/3), per (8), as observed for standard devices with <100> surfaces, and predictably as a function of inversion level (see Fig. 3).…”

Section: B Determining the Mean Transverse Electric Field E*t Across ...mentioning

confidence: 99%

Modeling the MOSFET’s Inversion Layer and its Universal Mobility: A New Experimental Method1

Shoucair¹

2022

Preprint

View full text Add to dashboard Cite

<div>We formulate a simple, yet accurate, model for a non-uniform mobile charge density ρ(z) giving rise to a mean potential Ψ* across an inversion layer of finite extent, which we measure by means of a novel, sensitive, experimental method involving nulls of harmonic distortion components (D2 ≈ D3 ≈ 0) of the drain current under sinusoidal excitation below saturation. We thus establish analytically and experimentally, that the low-field, "universal" effective mobility µeff varies as ~(E*T)-1/3 for transversal fields ET*= -(1/εsi)·[ɳQi + Qb] ≤ 0.5 MV/cm, wherein ɳ varies continuously between 1/2 and 1/3. We also establish and observe that the higher order, derivative, parameter θT quantifying µeff’s modulation by E*T varies as ~(E*T)-5/3 under laminar flow conditions, thereby further corroborating the foregoing effects and interpretations thereof.</div>

show abstract

“…The drain-to-source voltage (VDs) is assumed to be small an~ the spatial variation of the local normal electric field, mobility, and electron density is assumed to be small in the horizontal (x) direction. Since the distributions of local electric field and free charge carriers in the inversion layer are very nonlinear, Eef I is then determined using the following definition [23] (24]:…”

Section: µEf F Andmentioning

confidence: 99%

Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET

Zhou¹

2000

View full text Add to dashboard Cite

Title: MOBILITY MODELING AND SIMULATION OF SOI Si1-xGex p-MOSFET With increasing demand for complex and faster circuits, CMOS technologies are progressing towards the deep-submicron level. Process complexity increases dramatically, and costly techniques are to be developed to create dense field isolation and shallow junctions. Silicon-On-Insulator (SOI) may solve some of these problems. On the other hand, strained Si 1 _xGex layers have been successfully grown on Si substrates and demonstrated much higher hole mobility than bulk Si. This can be used to build high-mobility p-MOSFET with a buried Si 1 _xGex channel. A high mobility p-MOSFET would improve both the circuit speed and the level of integration. The purpose of the present study was to model and simulate the effective mobility (µeff) of SOI Si 1-xGex p-MOSFET, and to investigate the suitability of local mobility models provided by simulator MEDICI for studying SOI Si 1 _xGex p-MOSFET. The simulation is performed by using the two-dimensional device simulation program (MEDICI). The design parameters, such as Si-cap thickness, Ge profile and back-gate bias, were also investigated. A long channel (6µ) and a short channel (0.25µ) SOI and bulk Si 1 _xGex p-4 MOBILITY MODELING AND SIMULATION RESULTS 38 4.1 µeff and Eet f Definitions and Calculations. .

show abstract

Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation

Cited by 20 publications

References 12 publications

Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field

Conservation Laws at Physical Origins of Universal Mobility in MOSFET Inversion Layers in Consilience with River Flow in a Gravitational Field

Modeling the MOSFET’s Inversion Layer and its Universal Mobility: A New Experimental Method1

Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET

Contact Info

Product

Resources

About