Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET

Abstract

Title: MOBILITY MODELING AND SIMULATION OF SOI Si1-xGex p-MOSFET With increasing demand for complex and faster circuits, CMOS technologies are progressing towards the deep-submicron level. Process complexity increases dramatically, and costly techniques are to be developed to create dense field isolation and shallow junctions. Silicon-On-Insulator (SOI) may solve some of these problems. On the other hand, strained Si 1 _xGex layers have been successfully grown on Si substrates and demonstrated much higher hole mobility than bulk Si. This can be used to build high-mobility p-MOSFET with a buried Si 1 _xGex channel. A high mobility p-MOSFET would improve both the circuit speed and the level of integration. The purpose of the present study was to model and simulate the effective mobility (µeff) of SOI Si 1-xGex p-MOSFET, and to investigate the suitability of local mobility models provided by simulator MEDICI for studying SOI Si 1 _xGex p-MOSFET. The simulation is performed by using the two-dimensional device simulation program (MEDICI). The design parameters, such as Si-cap thickness, Ge profile and back-gate bias, were also investigated. A long channel (6µ) and a short channel (0.25µ) SOI and bulk Si 1 _xGex p-4 MOBILITY MODELING AND SIMULATION RESULTS 38 4.1 µeff and Eet f Definitions and Calculations. .

Studies of the structure of massive hybrid stars within a modified NJL model

“…Recently, based on the observation of pulsar and the recent binary neutron star (BNS) merger event GW170817, Ref. [76] gives a quite narrow limitation to B, that is, from (134.1 MeV) 4 to Now we can get the relation between the energy density of the quark matter and its pressure [77,78]…”