Extraction of R<sub>DS(ON)</sub> of n‐Channel Power MOSFET by Numerical Simulation Model

Salame, Chafic

doi:10.1155/apec.23.175

Cited by 1 publication

(1 citation statement)

References 12 publications

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“…The gate contact was maintained at 0 V during the acquisition of the source‐drain I‐V curve in the forward bias region (Figure 2) by sweeping the source polarization from 0 to 1 V (in forward bias, the source is positively polarized in respect with the drain). A 100 data points file is then saved and ready for numerical analysis (de la Bardonnie et al , 1999; Salame, 2001). Data points were introduced in specially conceived software that performs numerical calculations based on the double exponential model of a pn junction formulated by equation (1) (Dib et al , 2002): Equation 1 V T = kT/q is the thermal voltage.…”

Section: Methodsmentioning

confidence: 99%

Silicon MOSFET devices electrical parameters evolution at high temperatures

Salame

Habchi

2007

Microelectronics International

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PurposeThe purpose of this paper is to discuss the temperature failure effect on electronic components and their electrical parameters variation.Design/methodology/approachThe MOSFET device parameters analysis was done by numerical analysis based on a double exponential model using the integrated pn junction.FindingsThe temperature dependence of these parameters is investigated; their evolution allows the evaluation of device's operation reliability in high‐temperature environments.Originality/valueThe paper demonstrates how the temperature affect the normal operation of the electronic device and the model accuracy is investigated at high temperature.

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Section: Methodsmentioning

confidence: 99%