Silicon MOSFET devices electrical parameters evolution at high temperatures

Salame, Chafic; Habchi, Roland

doi:10.1108/13565360810846608

Cited by 6 publications

(7 citation statements)

References 14 publications

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“…Above the 30 min time interval, there seems that the double exponential model is not valid anymore. Similar conclusions have been observed when MOSFET devices have been exposed to an elevated temperature of above 2508C, due to device improper functionality and accelerating degradation, resulting in irreversible and induced permanent structural damage (Salame and Habchi, 2008).…”

Section: Resultssupporting

confidence: 76%

“…Neutral traps are originally present at the structure surface and in the semiconductor bulk and are facing phonons and lattice vibrations caused by the reverse current and temperature elevation (Salame and Habchi, 2008). The overheating effect to damage took only ten to 15 min to occur, which in turn is so short to be noticed by a PV user if not having any type of protection to the PV system against reverse currents before the DC connection to the inverter.…”

Section: Resultsmentioning

confidence: 99%

“…The overheating took place because of charges, having a certain energy level, get excited and by gaining extra energy pass through the p‐n junction. Neutral traps are originally present at the structure surface and in the semiconductor bulk and are facing phonons and lattice vibrations caused by the reverse current and temperature elevation (Salame and Habchi, 2008).…”

Section: Resultsmentioning

confidence: 99%

“…Experimentally collected I‐V curves were introduced into specially designed software that performs numerical calculations based on the double exponential model of a p‐n junction formulated by the following equation (Salame and Habchi, 2008): Equation 1 where:…”

Section: Methodsmentioning

confidence: 99%

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Evaluation of the electrical properties under extreme stress in photovoltaic solar modules

Sidawi

Abboud²,

Jelian³

et al. 2011

Microelectronics International

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2015),"Behavioral finance: insights from experiments I: theory and financial markets", Review of Behavioural Finance, Vol. 7 Iss 1 pp. 78-96 http://dx.Access to this document was granted through an Emerald subscription provided by emerald-srm:468524 [] For AuthorsIf you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this paper is to discuss the effect of electric reverse stress currents on the performance of photovoltaic solar modules. Design/methodology/approach -The effect of a reverse introduced current as a function of time is studied on the I-V and C-V characteristics and parameters which were extracted and analyzed using numerical analysis based on a reliable double exponential model. Findings -The effect of an introduced reverse current for different periods simulated the effect of accumulated extreme reverse currents which may arise in solar cells and modules due to different reasons, causing dramatic changes in the shunt resistance as well as other characteristics, mainly when the time of the current application exceeded a certain limit. Originality/value -The paper contributes to the research on the damaging effects of reverse currents on the normal operation of the solar cells and modules.

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Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Evaluation of the electrical properties under extreme stress in photovoltaic solar modules

Sidawi

Abboud²,

Jelian³

et al. 2011

Microelectronics International

Self Cite

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“…. The fundamental equation describing the double exponential model of a p-n junction is formulated by the following equation [11]:…”

Section: Fundamentalsmentioning

confidence: 99%

Capacitance Evolution of Photovoltaic Solar Modules Under the Influence of Electrical Stress

Zaraket¹,

Aillerie²,

Salame³

2015

Energy Procedia

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The main purpose of this work was to study the effect of electric currents reverse stress on the capacitance and in general the performance of photovoltaic modules. Different levels of reverse stress current are injected into the solar cell structure and the C-V characteristic are measured in the dark and illuminated conditions, at room temperature for several common periods of time. A digital double exponential model was used to analyze the experimental measurements. The dramatic changes in capacitance characteristics are caused from the effect of a reverse current introduced for different stress levels, simulated the effect of accumulated extreme reverse currents that can occur in the solar cells and modules for different reasons. The paper contributes to research on the adverse effects of reverse currents on the capacitance and normal functioning of cells and solar modules.

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Dark and illuminated characteristics of photovoltaic solar modules. Part I: Influence of dark electrical stress

Zaraket¹,

Aillerie²,

Salame³

2016

AIP Conference Proceedings

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International audienceThe main idea is to study the effect of reverse stress current on solar cells under illuminated conditions. More specifically the characteristics (I-V) and parameters were studiedin dark and illuminated conditions at room temperature for several common periods of time. For the numerical analysis of this work a double exponential model is used. The changes in characteristics which are caused from the effect of a reverse current introduced for different stress levels simulated the effect of accumulated extreme reverse currents that can occur in the solar cells and modules as result of shading and other different reasons. The paper originally contributes to the research on the adverse effects of reverse currents on the normal functioning of cells and solar modules

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Silicon MOSFET devices electrical parameters evolution at high temperatures

Cited by 6 publications

References 14 publications

Evaluation of the electrical properties under extreme stress in photovoltaic solar modules

Evaluation of the electrical properties under extreme stress in photovoltaic solar modules

Capacitance Evolution of Photovoltaic Solar Modules Under the Influence of Electrical Stress

Dark and illuminated characteristics of photovoltaic solar modules. Part I: Influence of dark electrical stress

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