2015),"Behavioral finance: insights from experiments I: theory and financial markets", Review of Behavioural Finance, Vol. 7 Iss 1 pp. 78-96 http://dx.Access to this document was granted through an Emerald subscription provided by emerald-srm:468524 [] For AuthorsIf you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this paper is to discuss the effect of electric reverse stress currents on the performance of photovoltaic solar modules. Design/methodology/approach -The effect of a reverse introduced current as a function of time is studied on the I-V and C-V characteristics and parameters which were extracted and analyzed using numerical analysis based on a reliable double exponential model. Findings -The effect of an introduced reverse current for different periods simulated the effect of accumulated extreme reverse currents which may arise in solar cells and modules due to different reasons, causing dramatic changes in the shunt resistance as well as other characteristics, mainly when the time of the current application exceeded a certain limit. Originality/value -The paper contributes to the research on the damaging effects of reverse currents on the normal operation of the solar cells and modules.

Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide 'miconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V characterization, the lateral device structure parameters could be extracted. Values of the extracted parameters are in good correlation with the values given by the manufactured. Advantage of this model the high precision results with a low cost. Perhaps, the most important point in this model, that we can replace the other techniques usually employed in this study where we destroyed the device for cut and cross section of the structure. The proposed technique in this paper can be very useful for analyzing any complex geometrical structure of VDMOS transistors (hexagonal, triangular, square etc...).