“…In general, this cross coupling is strong in the type-II MFs where the ferroelectricity appears due to particular kind of spin structure of the materials, as classified by Khomskii [3,4]. Owing to the mutually exclusive nature of magnetism and ferroelectricity, several mechanisms have been proposed so far to understand the origin of multiferrocity in type-II MFs, such as, breaking of the inversion symmetry through asymmetric Dzyaloshinskii-Moriya (DM) interaction, the strong spin-dependent p-d hybridization, the exchange striction, and the single-ion magnetic anisotropy [5][6][7][8][9][10][11][12][13]. However, this cross coupling of spin and charge can also lead to another aspect of the MFs i.e., the magnetoelectric coupling effect in the insulating materials apart from the proper ferroelectric polarization, which could facilitate the pathway to engineer memory devices based on this effect and enlighten our knowledge to model the cutting-edge multiferroic materials [14,15].…”