Extraordinary Hall effect based magnetic logic applications

Liu, T.; Lacour, Daniel; Montaigne, F.; Gall, Sylvain Le; Hehn, M.; Hauet, Thomas

doi:10.1063/1.4907615

Cited by 11 publications

(3 citation statements)

References 20 publications

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“…Spin manipulation has provided an open way for the information storage/communication and logic operation in past decades, where the semiconductor industry is under the limit of Moor’s law. − The composite materials with the spin-dependent effect are explosively launched with the development of nanotechnology, but more attention has been paid to manipulate the spin without external magnetic fields (e.g., spin polarized current and electric field) to achieve the high-quality spintronic device. − Recently, spin–orbit torque (SOT) induced by the spin Hall effect has been demonstrated theoretically and experimentally to tune anomalous Hall resistance. − Therefore, the memory device based on the spin-dependent Hall effect with the imbalanced transverse spin polarization charge is considered as a promising candidate for storage and logic with potential ultrahigh density, ultralow power consumption, and ultrahigh speed. − Therefore, more focus has been put on intrinsic properties of the device based on the spin-dependent Hall effect. Unfortunately, few work was reported on the hybrid spin device/complementary metal/oxide-semiconductor (CMOS) transistor circuit .…”

Section: Introductionmentioning

confidence: 99%

Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization

Zhang¹,

Peng²,

Yu³

et al. 2019

ACS Appl. Mater. Interfaces

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A spintronic device based on the spin-dependent Hall effect has attracted great interest because of its great potential applications in the multivalue storage and logic gate, which is a promising candidate to break the bottleneck of the information industry in the big data period. It is a technological challenge to implant spintronic devices into semiconductor integrated circuits. The anomalous Hall angle (θ), defined as the deviation of the electron flow from the current direction, is the key parameter to evaluate the capacity of Hall device compatibility. However, the bottleneck for the device is low θ (less than 5%) at room temperature (RT), making it difficult to directly complement with the semiconductor circuit which limits its potential application. Here, we report a simple perpendicular multilayered structure with θ up to 5.1% at RT. Wide working temperature (250−350 K) across RT for our samples will accelerate the potential applications in spintronic memory. A giant Hall angle at RT originates from the enhanced side-jump scattering at the atomic-scale-modified interfacial structure. The high θ at RT together with wide working temperature is practically significant and may provide the way for further 3D spintronic devices based on the spin-dependent Hall effect with ultrahigh storage density and ultralow power consumption.

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Section: Introductionmentioning

confidence: 99%

Tunable Giant Anomalous Hall Angle in Perpendicular Multilayers by Interfacial Orbital Hybridization

Zhang¹,

Peng²,

Yu³

et al. 2019

ACS Appl. Mater. Interfaces

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“…On one hand, AHE can be used to unravel the complex interplay among spin, orbital, lattice, and charge degrees of freedom in correlated electronic systems, e.g., by capturing the tiny magnetism and noncollinear/noncoplanar spin textures. 2−4 On the other hand, AHE is at the core of signal evaluation in electronics and exhibits a wide range of applications in multistate memory, 5−7 logic gate, 8,9 and magnetic tunnel junctions, 10 etc. Therefore, extensive efforts have been devoted to searching for new materials with large AHE.…”

mentioning

confidence: 99%

“…The AHE, generally occurring in solids with broken time-reversal symmetry (e.g., ferromagnets) as a consequence of spin–orbit coupling, is an extremely important magnetic transport phenomenon for both fundamental research and device applications. On one hand, AHE can be used to unravel the complex interplay among spin, orbital, lattice, and charge degrees of freedom in correlated electronic systems, e.g., by capturing the tiny magnetism and noncollinear/noncoplanar spin textures. − On the other hand, AHE is at the core of signal evaluation in electronics and exhibits a wide range of applications in multistate memory, − logic gate, , and magnetic tunnel junctions, etc. Therefore, extensive efforts have been devoted to searching for new materials with large AHE.…”

mentioning

confidence: 99%

Hundred-Fold Enhancement in the Anomalous Hall Effect Induced by Hydrogenation

Liu,

Gao,

Shi

et al. 2024

Nano Lett.

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The anomalous Hall effect (AHE) is one of the most fascinating transport properties in condensed matter physics. However, the AHE magnitude, which mainly depends on net spin polarization and band topology, is generally small in oxides and thus limits potential applications. Here, we demonstrate a giant enhancement of AHE in a LaCoO3-induced 5d itinerant ferromagnet SrIrO3 by hydrogenation. The anomalous Hall resistivity and anomalous Hall angle, which are two of the most critical parameters in AHE-based devices, are found to increase to 62.2 μΩ·cm and 3%, respectively, showing an unprecedentedly large enhancement ratio of ∼10000%. Theoretical analysis suggests the key roles of Berry curvature in enhancing AHE. Furthermore, the hydrogenation concomitantly induces the significant elevation of Curie temperature from 75 to 160 K and 40-fold reinforcement of coercivity. Such giant regulation and very large AHE magnitude observed in SrIrO3 could pave the path for 5d oxide devices.

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