Extraordinary tunability of high-frequency devices using Hf0.3Zr0.7O2 ferroelectric at very low applied voltages

Abstract

This paper presents the applications of the Hf 0.3 Zr 0.7 O 2 ferroelectric with a thickness of 10 nm for tuning high-frequency devices such as filters, phase shifters, and phased antenna arrays in the X band when the low bias voltages in the range À3 V-þ3 V are applied. In this respect, we show that a bandpass filter shifts its central frequency located at 10 GHz with 3 GHz, a phase shifter produces a phase difference of about 60 degrees in the X band, while the antenna array formed by two patched antennas is steering its lobe with 632 at 10 GHz. These results open the way for the tunability of high frequency devices for very low power applications, which represent one of the most challenging issues in applied physics. Published by AIP Publishing.

2D Materials Nanoelectronics: New Concepts, Fabrication, Characterization From Microwaves up to Optical Spectrum

“…Thus, amplifiers, filters, and antenna arrays can be tuned by ferroelectrics, but this approach is almost abandoned today due to the fact that the applied DC voltages attain tens of volts. However, we have demonstrated that extraordinary tunability of microwave devices can be obtained at very low DC voltages, not exceeding ± 3 V . In this respect, we have demonstrated that the phase shift of an interdigitated phase shifter in coplanar technology, fabricated at the wafer scale on HfZrO/high resistivity Si, is 60 0 at 1 GHz and 13 0 at 10 GHz, if the applied DC voltage is within the range ± 3 V. The DC voltage is so low that it can be provided by a battery .…”

“…The NDR of the ballistic graphene FET with inclined gate at V TG = 0 V (red dashed line), 0.5 V (blue dotted line) and 1 V (solid red line). Reproduced with permission . Copyright 2017, Institute of Physics, UK.…”

2.55 GHz miniaturised phased antenna array based on 7 nm‐thick Hf x Zr 1 − x O 2 ferroelectrics

“…HfO 2 doped with Zr) and some applications are already based on their properties, such as intense piezoelectric properties [4] and pyroelectric response [5]. We have recently shown theoretically that an extraordinary tunability can be obtained based on Hf x Zr 1 − x O 2 ferroelectrics [6] and we have demonstrated experimentally that phase shifters with phase shifts larger than 60° at 1 GHz and 13° at 10 GHz, at maximum applied DC voltages of ±3 V, are working with moderate losses [7]. We are continuing this research demonstrating that the phased array in Fig.…”

Heterostructures “Ferroelectric Film/Silicon Carbide” for High Power Microwave Applications

“…Today there is a stable interest in ferroelectric (FE) materials for tunable microwave (MW) applications caused by the dependence of dielectric permittivity of ferroelectrics on the strength of applied electric field [1][2][3][4]. The perspective properties of ferroelectrics at microwaves are high dielectric nonlinearity, low losses, fast switching time, low power consumption, and possibility to work under the high level of operating power [5][6][7][8].…”