Extreme electric loads at the ultra-thin films of the silicon oxide with inhomogeneous boundary

Perov, G.V.; Sinica, A.V.; Belova, I.A.

doi:10.1109/apeie.2014.7040750

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2018

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“…Thin films of silicon dioxide are used in VLSI as a gate dielectric in MIS transistors, as a dielectric layer of condensers in MIS dynamic storage, and as an ultrathin tunnel isolator in reprogrammable ROM, based on MNOS and SNOS structures [4][5][6]. The first two fields of application of thin coating are of utmost importance.…”

Section: Introductionmentioning

confidence: 99%

Thin Layers of Oxide Coating in Very-Large-Scale Integration

Mustafaev¹,

Khasanov²,

Мустафаев³

et al. 2018

Proceedings of the International Symposium “Engineering and Earth Sciences: Applied and Fundamental Research” (ISEES 2018)

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Scaling of very-large-scale integration (VLSI) circuits develops in the direction of increasing the surface of a crystal, packing density of elements on crystals, and miniaturization of components. These processes are limited by the necessity to provide high microelectronic reliability and sufficient percentage yield. For this reason, it is important to study the characteristics of thin oxide coating, as well as to investigate the degradation processes of metal oxide semiconductor (MOS) structures, made via nitriding gate oxide with the exposure to hot electrons and ionizing radiation.

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Section: Introductionmentioning

confidence: 99%