Extreme ultraviolet (EUV) source and ultra-high vacuum chamber for studying EUV-induced processes

Abstract

An experimental setup that directly reproduces Extreme UV-lithography relevant conditions for detailed component exposure tests is described. The EUV setup includes a pulsed plasma radiation source, operating at 13.5 nm; a debris mitigation system; collection and filtering optics; and an UHV experimental chamber, equipped with optical and plasma diagnostics. The first results, identifying the physical parameters and evolution of EUV-induced plasmas are presented. Finally, the applicability and accuracy of the in situ diagnostics is briefly discussed.

Ion energy distributions in highly transient EUV induced plasma in hydrogen

“…Although EUV lithography light sources will operate at a very high repetition rate of tens of kHz, 18 in this study, a much lower frequency is used to gain understanding of the basic physical mechanisms. Other research groups have estimated local plasma ion densities using Langmuir probes 19 and ion surfaces fluxes have been characterized using retarding field energy analyzers. 20 Both however lack the ability to resolve individual species.…”

Numerical modeling of tin jet motion after interaction with laser pulse

“…В эксперименте используется Nd:YAG лазерная система, состоящая из задающего генератора и усилителя мощности, производства компании "Lotis TII" [5]. Длина волны лазерного излучения 1,064 мкм.…”

“…Так, например, в плазменных источниках капли могут возникать в результате фрагментации струи под воздействием импульсов давления плазмы. Для оптимальной работы источника необходимо подавлять потоки капель, поэтому разрабатываются специальные механические системы защиты [4,5], для проектирования которых необходимо знать угловое и энергетическое распределение потоков жидкого вещества.…”

Numerical study of extreme-ultra-violet generated plasmas in hydrogen

“…e ISAN EUV experimental setup is based on a tin EUV radiation source, which is a Z-pinch discharge plasma with 1500 Hz repetition rate, which has been described in detail elsewhere [93]. is source is a good tool for exploring EUV-induced surface processes over a large number of pulses (> 1 MShot).…”

“…Unfortunately, measuring all the relevant parameters experimentally is difficult due to the transient nature of the EUV induced plasma. For example, the insertion of a probe can yield unreliable estimates of plasma parameters for EUV induced plasmas, since, during and aer the EUV pulse, the probe signal is heavily distorted [92,93]. 72…”