Extremely compact (0.3 cm
            <sup>3</sup>
            ) 40 Gbit/s optical receiver module with ease-of-use receptacle interface and feedthrough launcher

Fukatsu, K.; Takeuchi, Tetsuya; Shiba, Kazuhiro; Makita, Kikuo; Amamiya, Y.; Suzuki, Yoshikazu; Kato, Tetsuya

doi:10.1049/el:20040373

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…The loaded resistance was 50 Ω, and the bias was 4 V. The EC-WG-PD maintained high-speed performance under high input power, owing to a reduction in the space charge effect. In addition, we observed a clearly eye-opened waveform at 40 Gbps for an implemented single-output receiver module [9]. The module included an InGaP/GaAs hetero-junction transimpedance amplifier (TIA) IC.…”

Section: Evanescently Coupled Waveguide Photodiodesmentioning

confidence: 93%

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Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

Makita

Shiba

Nakata

et al. 2009

IEICE Trans. Electron.

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This paper describes the recent advances in semiconductor photodiodes for use in ultra-high-speed optical systems. We developed two types of waveguide photodiodes (WG-PD)-an evanescently coupled waveguide photodiode (EC-WG-PD) and a separated-absorption-andmultiplication waveguide avalanche photodiode (WG-APD). The EC-WG-PD is very robust under high optical input operation because of its distribution of photo current density along the light propagation. The EC-WG-PD simultaneously exhibited a high external quantum efficiency of 70% for both 1310 and 1550 nm, and a wide bandwidth of more than 40 GHz. The WG-APD, on the other hand, has a wide bandwidth of 36.5 GHz and a gain-bandwidth product of 170 GHz as a result of its small waveguide mesa structure and a thin multiplication layer. Record high receiver sensitivity of −19.6 dBm at 40 Gbps was achieved. Additionally, a monolithically integrated dual EC-WG-PD for differential phase shift-keying (DPSK) systems was developed. Each PD has equivalent characteristics with 3-dB-down bandwidth of more than 40 GHz and external quantum efficiency of 70% at 1550 nm.

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Section: Evanescently Coupled Waveguide Photodiodesmentioning

confidence: 93%

“…Minimum received power of PIN-PD and APD. Experimental data: (a) EC-WG-PD[9], (b) WG-APD[20], (c) WG-APD[10].…”

mentioning

confidence: 99%

Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

Makita

Shiba

Nakata

et al. 2009

IEICE Trans. Electron.

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Adhesive Bonding of Passive Optical Components

Bosshard

Micro- And Opto-Electronic Materials and Structures: Physics, Mechanics, Design, Reliability, Packaging

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CMOS device noise considerations for terabit lightwave systems

Dronavalli

Jindal

2006

IEEE Trans. Electron Devices

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Extremely compact (0.3 cm ³ ) 40 Gbit/s optical receiver module with ease-of-use receptacle interface and feedthrough launcher

Cited by 3 publications

References 3 publications

Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

Adhesive Bonding of Passive Optical Components

CMOS device noise considerations for terabit lightwave systems

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Extremely compact (0.3 cm 3 ) 40 Gbit/s optical receiver module with ease-of-use receptacle interface and feedthrough launcher

Cited by 3 publications

References 3 publications

Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

Recent Advances in Ultra-High-Speed Waveguide Photodiodes for Optical Communication Systems

Adhesive Bonding of Passive Optical Components

CMOS device noise considerations for terabit lightwave systems

Contact Info

Product

Resources

About

Extremely compact (0.3 cm ³ ) 40 Gbit/s optical receiver module with ease-of-use receptacle interface and feedthrough launcher