Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

Shimomura, S.; Kaneko, Shinjiroh; Motokawa, Takeharu; Shinohara, Kazuhiko; Adachi, Akira; Okamoto, Yasunori; Sano, Naokatsu; Murase, K.; Hiyamizu, S.

doi:10.1016/0022-0248(95)80244-7

Cited by 18 publications

(6 citation statements)

References 7 publications

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“…Formation of atomically flat GaAs/AlGaAs interfaces over a macroscopic area is very important and useful for applications to quantum devices such as resonant tunnelling hot electron transistors. GaAs/AlGaAs quantum wells (QWs) grown on (411)A GaAs substrates by molecular beam epitaxy (MBE) have been reported to show extremely flat interfaces over a large area [1][2][3][4]. GaAs/Al 0.3 Ga 0.7 As QWs grown on the (411)A substrate show a very narrow photoluminescence (PL) peak (FWHM = 5.5 meV at λ = 709.2 nm) at 4.2 K whose linewidth is the same as that for growth-interrupted QWs grown on (100) GaAs substrates [1].…”

Section: Introductionmentioning

confidence: 99%

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

Shinohara¹,

Motokawa²,

Kasahara³

et al. 1996

Semicond. Sci. Technol.

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Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy (MBE) were investigated for applications to GaAs/AlGaAs resonant tunnelling diodes with atomically flat (411)A GaAs/AlGaAs interfaces over an entire device area. These flat interfaces can be realized by MBE under certain growth conditions (growth temperature T s = 580 • C and V/III pressure ratio of less than or equal to 11). When the V/III pressure ratio is high (above 15) for T s = 580 • C, Si-doped GaAs on a (411)A substrate showed an n-type conduction similar to conventional Si-doped GaAs on (100) substrates. (411)A GaAs/AlGaAs interfaces grown under this condition, however, cannot become as flat and as superior as conventional (100) GaAs/AlGaAs interfaces. On the other hand, when the V/III pressure ratio is 7, an Si-doped GaAs layer on (411)A showed p-type conduction. In the case of a V/III pressure ratio of 10.5 and T s = 580 • C, Si-doped GaAs still showed n-type conduction with the compensation ratio γ (≡ (N D + N A )/(N D − N A )) = 2.3. This result suggests that Si can be used as an n-type dopant in GaAs for GaAs/AlGaAs resonant tunnelling diodes grown on (411)A GaAs substrates with atomically flat (411)A GaAs/AlGaAs interfaces.

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Section: Introductionmentioning

confidence: 99%

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

Shinohara¹,

Motokawa²,

Kasahara³

et al. 1996

Semicond. Sci. Technol.

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“…Surface morphology of the (411)A QWs sample was very smooth and featureless as shown in Fig. 5 These results indicate that the (411)A plane is very stable during MBE growth not only for GaAs/AlGaAs QWs but also for In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As system at high substrate temperatures. 2b).…”

Section: Mbe Growth Ofmentioning

confidence: 64%

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Kitada

Shimoda

Ohashi

et al. 1998

J. Electron. Mater.

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“…reported that the (411)-oriented substrate enables us to obtain extremely flat interfaces as compared with (100)oriented substrate. 12) After the growth, the GaAs substrate was removed by an epitaxial lift-off method, and the MQW layer was bonded on a glass (SiO 2 ) substrate by van der Waals bonding. To apply an electric field, Cr/Au electrodes with a 1 mm gap were formed on the sample surface.…”

Section: Sample Structurementioning

confidence: 99%

Terahertz Wave Generation Device using Multi-Quantum Well with Transverse Electric Field

Morohashi

Komori

Tsurumachi

et al. 2005

Jpn. J. Appl. Phys.

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A multi-quantum-well (MQW) device with an electric field in the MQW plane was proposed as a high-power terahertz electromagnetic wave (THz wave) generator. High-power THz waves were generated by ultrashort optical pulse excitation of the MQW device. In the excitation wavelength dependence, the amplitude of the THz wave had a peak at around exciton absorption in the MQW, which implies that the THz wave is generated by the acceleration of photoexcited carriers in the MQW region. The amplitude was proportional to an applied voltage, and the power of the THz wave at an applied voltage of 500 V was 60 times higher than that of the bulk InAs reference.

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Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

Cited by 18 publications

References 7 publications

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

Terahertz Wave Generation Device using Multi-Quantum Well with Transverse Electric Field

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