Extremely low phase noise UHF oscillators utilizing high-overtone, bulk acoustic resonators

Driscoll, M.M.; Jelen, R.A.; Matthews, N.

doi:10.1109/ultsym.1990.171418

Cited by 12 publications

(2 citation statements)

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“…It was reported that the Q-frequency product exhibited by the types of VHF BAW and UHF SAW resonators is often used on the order of 12 · 10 12 and 6 · 10 12 , respectively [1]. On the other hand, high-overtone bulk acoustic resonator (HBAR) consisting of a piezo-film with two electrodes on a substrate with a very high Q value, exhibits a Q-Frequency product more than 10 14 [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Parameter characterization of high-overtone bulk acoustic resonators by resonant spectrum method

Zhang

Zheng

2005

Ultrasonics

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Section: Introductionmentioning

confidence: 99%

Parameter characterization of high-overtone bulk acoustic resonators by resonant spectrum method

Zhang

Zheng

2005

Ultrasonics

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“…Advancements in mobile communications technology require that quartz oscillators have low phase noise characteristics. Many efforts have been made to reduce oscillator phase-noise either by using various circuit designs or by increasing the resonator driving power [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Near-carrier phase-noise characteristics of narrow band colpitts oscillators

Watanabe

Komine

Goka

et al.

Proceedings of the 2004 IEEE International Frequency Control Symposium and Exposition, 2004.

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A theoretical approach to estimate the near-carrier phase-noise level of narrow band transistor Colpitts oscillators is described.Near carrier phase-noise characteristics of reference oscillators in mobile communication systems constantly need to be improved. We proposed a narrow-band Colpitts oscillator for SC-cut resonators in 1996 FCS. This oscillator uses an AT-cut resonator as a band selection filter, and we showed that the nearcarrier phase-noise characteristics of the oscillator were improved over 5 dB compared with conventional transistor Colpitts oscillators. An analysis of the close to carrier phase-noise characteristics of the narrow-band Colpitts oscillators is described. The open-loop impedance, that is, a series including a SC-cut resonator and anoscillator active circuit, is calculated using a linear circuit model with a non-linear transistor model. We show the loaded Q can be improved by introducing the resonator filter in the oscillation circuit. Based on Leeson's model, the near carrier phase-noise is estimated using calculated Q values. The results correspond well with previous experiments. We also show that the phase-noise can be greatly improved -under -148 dBc/Hz at 10Hz offset -by using a resonator filter with high Q value.

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