Extremely narrow luminescence linewidth in GaAs single quantum wells by insertion of thin AlAs smoothing layers

Fischer, A.; Tapfer, L.; Feuerbacher, B. F.

doi:10.1007/bf00323730

Cited by 14 publications

(1 citation statement)

References 11 publications

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“…Molecular-beam epitaxy (MBE) has enabled the realization of two-dimensional (2D) structures with sharp interfaces [1] and high electron mobilities [2], producing much novel and unexpected physics. Recently, interest has turned to reducing the dimensionality still further in order to discover new or enhanced optical and transport phenomena.…”

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confidence: 99%

Direct magneto-optical observation of a quantum confined one-dimensional electron gas

et al. 1991

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The energy spectra of isolated one-dimensional (ID) electron channels have been studied by photoluminescence in zero and finite magnetic fields B. Arrays of periodic quantum wires (period =290-400 nm, width = 150-170 nm) were etched from modulation-doped AlvGai-vAs/GaAs heterojunctions, with special low-concentration Be 5 doping in the buffer layer to increase the photoluminescence intensity. We were able to attain the ID quantum limit, i.e., occupation of only the lowest ID subband at 5=0, and to measure, at small B, a characteristic quadratic B dispersion of the 1D subband edge.

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Direct magneto-optical observation of a quantum confined one-dimensional electron gas

et al. 1991

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Der Quantentrog‐Pockels‐Effekt

1993

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Kürzlich gelang es, in GaAs‐Quantentrögen durch elektrische Felder gigantische optische Anisotropien zu induzieren. Sie lassen sich mit Hilfe von Symmetriebetrachtungen als „linearer elektro‐optischer Pockels‐Effekt”︁ deuten. Im folgenden werden diese Resultate vorgestellt und in Zusammenhang mit dem klassischen Pockels‐Effekt sowie anderen Quantentrog‐Effekten im elektrischen Feld gebracht. Mögliche Anwendungen des neuen Phänomens werden angesprochen.

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