Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry

Abstract

Vanadium‐doped SiC is under study for high‐power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect‐mediated electronic transition pathways from sub‐bandgap illumination in this material with low absorption and multi‐photon and multi‐path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium‐doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co‐dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.

A Method to Simulate Extrinsic Light Excitation of Vanadium-Compensated 6H-SiC

“…Moreover, V acting as a fast recombination center, effectively reduces the carrier lifetime [9,10]. In addition, the electrons captured on the vanadium acceptor level can be excited to the conduction band at sub-bandgap light, enhancing the absorption coefficient of extrinsic light excitation [11]. Previous studies mostly focus on the intrinsic light excitation of SiC [12][13][14], which requires photon energy higher than the 6H-SiC band-gap (3eV).…”