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Vanadium‐doped SiC is under study for high‐power photoconductive switches and is receiving increased attention as a potential material system for quantum computing, as the V can act as a quantum emitter at telecom wavelengths. Knowledge of the defect‐mediated electronic transition pathways from sub‐bandgap illumination in this material with low absorption and multi‐photon and multi‐path transition probability is important in optimizing quantum efficiency. Herein, the optical transitions of vanadium‐doped SiC for two polytypes as a function of dopant concentration using a total internal reflection (TIR) geometry are examined. Normalized quantum efficiency is reported and correlated with both dopant concentrations (V, N, B, and Al) measured by secondary ion mass spectroscopy (SIMS) and absorption measurements. Although both polytypes respond well to 532 nm light, efficiency at longer wavelengths does not correlate 1:1 with absorption coefficient and strongly depends on the polytype and net background co‐dopant concentration. This has important implications for efficient excitation of both carriers for optoelectronics and for the use of V as a quantum emitter.

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Optoelectronics This image shows an illustration of the light trapping geometry used to capture low absorbing light used to identify the relative efficiency of different low absorption coefficient photo‐absorption pathways for SiC:V with varying co‐doping, shown for the cases considered in the middle and bottom rows. More details can be found in article number http://doi.wiley.com/10.1002/pssa.202000315 by Lars F. Voss and co‐workers.