spacing is becoming much smaller. As a result, one striking-particle may simultaneously affect two OFF-state transistors in a storage element due to multiple node charge collection mechanisms [4], causing a double-node upset (DNU). SNUs and DNUs can cause an invalid value-retention in a storage element which is an important part of the modern advanced circuits and systems. Consequently, to improve the robustness of circuits and systems that are protected against potential data corruptions, execution errors, or even crashes, both SNUs and DNUs are required to consider for reliability designs.