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This paper proposes a 4-node-upset (4NU) recoverable and high-impedance-state (HIS) insensitive latch design, namely QRHIL, for highly robust computing in harsh radiation environments. The latch mainly comprises a 5×5 looped C-element matrix to store values and provide complete 4NU recovery. Owing to the multiple-level error-interception of the 5×5 C-element matrix, the latch can recover from all possible 4NUs; thus, the latch is insensitive to HIS. Simulation results demonstrate the 4NU-recovery of the proposed latch. The results also show that the latch can approximately save 46% D-Q delay and 46% CLK-Q delay owing to the use of a high-speed D-Q path and clock-gating, compared with the state-of-the-art 3NU-recoverable latch (TNURL) that is not 4NU-recoverable. CCS CONCEPTS• Hardware  Circuit hardening; Latch design; Transient errors and upsets; Fault tolerance.

This paper presents a novel dual-interlocked storagecell (DICE)-based double-node-upset (DNU) self-recoverable, namely DURI-FF, in the nano-scale CMOS technology. The master latch of the DURI-FF cell consists of three transmission gates (TGs) and three interlocked DICEs with three common nodes. The common nodes are connected to TGs for value initialization. The slave latch of the DURI-FF cell comprises six TGs, six inverters and three interlocked DICEs. The outputs of the inverters respectively feed the internal nodes of the slave latch. The interlocked DICEs make the master latch and the slave latch DNU self-recoverable. Simulation results validate the DNU self-recoverability of the proposed DURI-FF cell. Moreover, compared with the state-of-the-art hardened flip-flop cells, the proposed DURI-FF cell achieves roughly 43% delay reduction at the cost of moderate silicon area and power dissipation.

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To meet the requirements of both costeffectiveness and high reliability for low-orbit aerospace applications, this paper first presents a radiation hardened latch design, namely HLCRT. The latch mainly consists of a single-node-upset self-recoverable cell, a 3input C-element, and an inverter. If any two inputs of the C-element suffer from a double-node-upset (DNU), or if one node inside the cell together with another node outside the cell suffer from a DNU, the latch still has a correct value on its output node, i.e., the latch is effectively DNU hardened. Based on the latch, this paper also presents a flip-flop, namely HLCRT-FF that can tolerate SNUs and DNUs. Simulation results demonstrate the SNU/DNU tolerance capability of the proposed HLCRT latch and HLCRT-FF. Moreover, due to the use of a few transistors, clock gating technologies, and high-speed paths, the proposed HLCRT latch and HLCRT-FF approximately save 61% and 92% of delay, 45% and 55% of power, 28% and 28% of area, and 84% and 97% of delay-power-area product on average, compared to state-of-the-art DNU hardened latch/flip-flop designs, respectively.