“…As a p-type semiconductor with an intrinsic direct band gap of 2.17 eV, cuprous oxide (Cu 2 O) possesses a set of unique optical and electronic properties. , In addition, due to its low cost, nontoxicity, and high absorption rate in the visible region, it is regarded as one of the most promising materials for photovoltaic and photocatalytic application. − According to the Shockley–Queisser limit, Cu 2 O has been theoretically predicted to have a maximum power conversion efficiency of approximately 20% for solar cells, , while the achieved highest efficiency is only about 6.1% by now . Therefore, more research is needed to further optimize the material properties and then to improve the cell efficiency. , One way which is often used is to modulate the conductivity of the Cu 2 O films by doping, and nitrogen has been proved as an effective dopant. , Several experimental and theoretical studies have been dedicated to study the doping effects of nitrogen on the crystal structure, electronic structure, and optical properties of Cu 2 O. − Researchers found that nitrogen can be easily incorporated into the crystal lattice of Cu 2 O at high concentrations to substitute oxygen atoms and act as a p-type dopant, and some reported that an intermediate band forms in the gap by N doping.…”