Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates

Persson, Stefan; Fjer, M.; Escobedo-Cousin, Enrique; Malm, Gunnar; Wang, Y.-B.; Hellström, Per‐Erik; Östling, Mikael; Parker, E. H. C.; Nash, L.; Majhi, P.; Olsen, SH; O'Neill, AG

doi:10.1109/iedm.2008.4796800

Cited by 4 publications

(2 citation statements)

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“…The key idea in the fabrication of the sSi HBTs has been the usage of the SRB to boost the amount of the Ge content in the base [2]. In order to investigate the impact of the SRB in terms of defect density on the degradation of the noise performance, defect characterization was performed on blanket material grown simultaneously with the processed wafers.…”

Section: Defect Characterisationmentioning

confidence: 99%

“…It was reported that sSi HBTs exhibit a maximum current gain β of 3783. This represents an enhancement of the current gain by 10× compared with SiGe HBTs (β max =349) and more that 30 compared with Si BJTs (β max =111) [2,3]. Among the different types of noise mechanisms presented in semiconductors (i.e., shot noise, G/R noise, random telegraph signal noise), low frequency noise is typically observed to exhibit a 1/f dependence and is an important figure of merit.…”

Section: Introductionmentioning

confidence: 96%

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Noise performance in strained Si heterojunction bipolar transistors

Fjer

Persson

Escobedo-Cousin

et al. 2011

2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC)

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In this paper, a study of the noise performance of strained Si Heterojunction Bipolar Transistors (sSi HBTs) is presented. This novel device exhibits low noise levels compared with Si Bipolar Junction Transistors (Si BJTs) and SiGe Heterojunction Bipolar Transistors (SiGe HBTs) for the same collector current, which can lower the noise in circuit applications. This performance benefit originates from the high current gain in sSi HBTs. However, the latter shows a higher noise level compared with the other devices at fixed base current. This is due to the presence of defects that are caused by the integration of a strained relaxed buffer used in the fabrication of sSi HBTs. The relationship between low frequency noise and defects has also been demonstrated using material characterisation.

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Section: Defect Characterisationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%