Fabrication and characterization of 3-Dimensional MOS transistor tip integrated micro cantilever

Abstract

We fabricate and characterize a three-dimensional (3-D) MOS (metal-oxide-semiconductor) transistor tip integrated micro cantilever to measure the surface properties. The 3-D MOS transistor tip is fabricated on the front side end of the cantilever, and the cantilever itself works as a tip. These features make the device possible to investigate hard-detecting parts such as the deep trenches and the sidewalls of the structure. The MOS transistor tip has other advantages such as the high operation speed, the high sensitivity, and the reduction of the required equipments like the lock-inamplifier. The MOS transistor tip is fabricated threedimensionally, utilizing the lateral diffusion and the anisotropic wet etching with TMAH solution, since the etch rate of {211} plane is much higher than those of {100} or {111} planes. The gate area is formed by selfaligned technique, using crystallographic dependant wet etching. The well-known convex corner compensation pattern is used for the gate length control during the tip fabrication process. The characteristics of the fabricated device are measured with respect to the various electric signals and the results show the well-established detection properties.

V-shaped metal–oxide–semiconductor transistor probe with nano tip for surface electric properties

“…1). To overcome these difficulties, metal-oxide-semiconductor (MOS) transistor-embedded probes have been investigated [6,7]. They could allow fast scanning and system minimization, but new difficulties arise in fabrication due to the three-dimensional (3-d) tip shape of the MOS transistor.…”

Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor

“…There are a number of high-resolution scanning probe microscope (SPM) techniques for mapping the electrical properties of condensed or soft surfaces [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Electrostatic force microscopy (EFM) and Kelvin probe force microscopy (KFM) are based on the effect of the electrostatic interaction between a biased probe and the sample for calculating a quantitative value of the electric potential.…”

“…Scanning capacitance microscopy uses electrical measurements only [3][4] and has the same level of resolution. Also there are works [5][6][7][8][9][10][11][12] where active electrical sensors were fabricated on the SPM probe apex for studying the electrical properties of the sample independently from its topography measurements. These sensors include resistive probe [5], field-effect transistors (FETs) made using CMOS-compatible [8][9] or ion milling techniques [6][7], single-electron transistors [10][11], NEMS device [12].…”