V-shaped metal–oxide–semiconductor transistor probe with nano tip for surface electric properties

A scanning microscopy technique based on capacitive coupling with a field-effect transistor integrated with the tip

“…The FET in the ToGoFET probe can operate with a gate voltage below zero, so that the ToGoFET can detect the sinusoidally varying tip charge due to the AC bias applied to the buried metal line without requiring an additional DC offset to be applied to the buried metal lines. In previous work on the development of the ToGoFET probe, the doped channel region of a depletion-mode FET was realized in such a way that the doped regions of the source and drain contacts were diffused using a thermal process, and the doped regions were connected in the gate region [7]. In this work, ion implantation was used to form the channel, and phosphorous was implanted into the channel region in order to control the threshold voltage.…”

“…SCM measures the spatial variation in the capacitance, whereas EFM measures the electrostatic reaction force between the probe tip and the surface [6]. We have previously introduced SPM techniques to characterize the electric potential and bound charge distribution at a surface using the custom-built ToGoFET Probe [7]. With that method, the electric potential or the charge distribution may affect the conducting tip, which is in electrical contact with the gate of a field-effect transistor (FET), so that the source-drain current depends on the surface electric potential or charge density.…”

“…Many custom probes that employ FETs have been proposed for measuring the electrical properties of surfaces [7][8][9]. Among them, Lee et al proposed a method employing an FET on a flat surface of a cantilever, with a sharp tip mounted on the gate of the FET [7].…”

“…Among them, Lee et al proposed a method employing an FET on a flat surface of a cantilever, with a sharp tip mounted on the gate of the FET [7]. We term this arrangement a tip-on-gate-of-FET (ToGoFET) probe because of the structure.…”

Особенности Измерения Поверхностного Распределения Электрического Потенциала Локальным Зондом На Основе Полевого Транзистора С Каналом-Нанопроводом

“…Для проведения многих исследований в микроэлектронике, биологии, химии и медицине необходим высокочувствительный неразрушающий анализ пространственного распределения профиля электрического потенциала с высоким пространственным и полевым разрешением. К настоящему времени известны десятки методик сканирующей зондовой микроскопии (СЗМ) для измерения электрических свойств твердотельных или мягких поверхностей [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Электростатическая силовая микроскопия (EFM) и силовая микроскопия зонда Кельвина (KFM) основаны на эффекте электростатического взаимодействия между смещенным зондом и образцом для расчета количественного значения электрического потенциала.…”