Journal of Crystal Growth
 2023
DOI: 10.1016/j.jcrysgro.2023.127259
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Fabrication and characterization of a high-electron-mobility transistor using a sputtering buffer layer on a Si substrate

Yoshihiro Ueoka
1
,
Yuya Suemoto
2
,
Maki Kiuchi
3
et al.
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