Fabrication and Characterization of a PZT thin Film Actuator for a Micro Electromechanical Switch Application

Hoffmann, M.; Leuerer, T.; Krüger, Christopher; Böttger, U.; Mokwa, W.; Waser, Rainer

doi:10.1557/proc-688-c5.9.1

Cited by 3 publications

(3 citation statements)

References 11 publications

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“…When an ac voltage V is applied to the PMN-PZT thin films, the piezoelectric coefficient d 31 is calculated as where is the tip deflection of the beam, L is the length of the beam, t is the layer thickness, and s is the mechanical compliance. 18,19) In this equation, ''1'' denotes the substrate and ''2'' denotes the piezoelectric thin film. We have already reported that the mechanical compliance of PZT thin films was smaller than that of PZT bulk ceramics.…”

Section: Piezoelectric Properties Of the Pmn-pzt Thin Filmsmentioning

confidence: 99%

Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Fujii¹,

Fujii

Takayama³

et al. 2009

jjap

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The 0.875Pb(Mg 1=3 Nb 2=3 )O 3 -0.125Pb(Zr,Ti)O 3 [0.125PMN-0.875PZT (50/50)] thin films, which have an extremely large piezoelectric coefficient d 31 of À225 pm/V, have been successfully obtained on (100) Si substrates by RF-magnetron sputtering. These PMN-PZT thin films have a high (001) orientation. The dependences of the electrical and piezoelectric properties of these films on substrate heating temperature were evaluated. The " r of PMN-PZT films prepared in the substrate heating temperature range of 540 to 620 C was almost constant at 1400. The d 31 was measured from the tip deflection of the cantilever beams. Even without a poling treatment, the d 31 of the PMN-PZT thin films at 580 C was À225 pm/V. This d 31 was 50% larger than that of PZT thin films deposited under the same conditions. These PMN-PZT thin films are attractive materials for micro actuator applications, especially for ink jet head actuators.

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Section: Piezoelectric Properties Of the Pmn-pzt Thin Filmsmentioning

confidence: 99%

Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Fujii¹,

Fujii

Takayama³

et al. 2009

jjap

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“…[1][2][3][4][5][6] Ferroelectric lead zirconate titanate (PZT) films are considered to be key material to realize the devices. However, the amount of the displacement and generative force of PZT thin films is not sufficient in some applications of microactuators.…”

Section: Introductionmentioning

confidence: 99%

Texture-control of lead zirconate titanate films for actuator applications

et al. 2003

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A combination of the preparation technique for ferroelectric films such as lead zirconate titanate (PZT) and the micromachining of Si is considered to be an effective way to fabricate piezoelectric microdevices like microactuators called a microelectromechanical system (MEMS). However, the amount of the displacement and force of PZT thin films is not sufficient in some applications of microactuators. To achieve the property of large displacement, increase of the film thickness or improvement of the piezoelectric property is required. One of the techniques to improve the ferroelectric and piezoelectric properties is assumed to be the arrangement of the polarization direction using a texture control process. We successfully preparaed the (100) and (111) dominant oriented Pb(Zr 1-x Ti x )O 3 thin films using a chemical solution deposition (CSD) process. On the other hand, an arc-discharged reactive ion-plating (ADRIP) method is one of the candidates to fabricate the thick PZT films because of high deposition rate such as 3 µm/h. In this work, the texture-controlled PZT thin and thick films deposited onto Pt/Ti/SiO 2 /Si substrates were prepared using CSD or ADRIP process for actuator applications. In the case of ADRIP process, (100) and (111) dominant oriented PZT thick films was formed onto CSD derived and texture controlled PZT thin film layer.

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“…1 Moreover, PZT thick films above 2 m in thickness have been investigated for use as optical waveguides 2 and in microelectromechanical system ͑MEMS͒ applications. 3 High-quality PZT films are essential in these applications and metallorganic chemical vapor deposition ͑MOCVD͒ is recognized as one of the most promising methods of deposition. This is because MOCVD-PZT films produce exceptional film quality together with good step conformability, a high deposition rate, and large areas of uniform film quality.…”

mentioning

confidence: 99%

Effect of Solvent on MOCVD of Pb(Zr, Ti)O[sub 3] Films with Liquid-Delivery Source Supply Method

Funakubo

Asano

Ozeki

et al. 2004

J. Electrochem. Soc.

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We investigated the effect of a solvent on the metallorganic chemical vapor deposition ͑MOCVD͒ of Pb͑Zr, Ti͒O 3 ͑PZT͒ films by comparing conventional bubbling and sublimation delivery methods with one using liquid delivery where the source materials were dissolved in a solvent and vaporized in separate vaporizers. A Pb͑C 11 H 19 O 2 ) 2 -Zr͑O•t-C 4 H 9 ) 4 -Ti͑O•i-C 3 H 7 ) 4 -O 2 system was used as the source, while C 8 H 18 was used as the solvent together with C 4 H 8 O. The deposition rates of all constituent oxides decreased with the liquid-delivery method. Moreover, the process window to obtain stoichiometric PZT films ͓Pb/͑Pb ϩ Zr ϩ Ti) ϭ 0.5], irrespective of the supply rate of the Pb source, was diminished with the liquid delivery method, suggesting the contribution of the solvent on the deposition mechanism of PZT film. These phenomena were observed not only with C 8 H 18 but also when C 4 H 8 O was used as a solvent. Pb͑Zr, Ti͒O 3 ͓PZT͔ is a solid solution of PbTiO 3 and PbZrO 3 and has a perovskite structure. PZT films with thicknesses of less than 300 nm deposited on Si substrates have been used for nonvolatile memory ͑FeRAM, ferroelectric random access memory͒ applications. 1 Moreover, PZT thick films above 2 m in thickness have been investigated for use as optical waveguides 2 and in microelectromechanical system ͑MEMS͒ applications. 3 High-quality PZT films are essential in these applications and metallorganic chemical vapor deposition ͑MOCVD͒ is recognized as one of the most promising methods of deposition. This is because MOCVD-PZT films produce exceptional film quality together with good step conformability, a high deposition rate, and large areas of uniform film quality. 4 Two types of methods have been employed in PZT-MOCVD to obtain source gases that included Pb, Zr, and Ti elements. The first is the conventional bubbling and sublimation method where the vapor of the source gases, including the metal elements, is obtained by bubbling through an inert gas, or by sublimation where the vaporized elements are carried by the inert gas. [5][6][7] In this method of supply, only the carrier gas, such as Ar and N 2 , is supplied to the reaction chamber together with the source gases including the metal elements and the oxidant gas, such as O 2 . The other method, called the liquid-delivery source supply, is widely used to deposit PZT films by MOCVD,4,[8][9][10][11] where the source materials are dissolved into the solvent and vaporized at the vaporizer. The advantage of this is the increased deposition rate of films due to the increased rate of supply of the source gases to the reactor irrespective of their vapor pressure. Moreover, it is easy to precisely control the rate of supply of the source materials by measuring the solution, including the source materials, with a liquid mass-flow controller. In addition, the reliability of the precursor delivery is expected by alleviating the direct heating of the sources which usually degrades the source and diminishes the source vapor pressure with time. Ho...

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Fabrication and Characterization of a PZT thin Film Actuator for a Micro Electromechanical Switch Application

Cited by 3 publications

References 11 publications

Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Texture-control of lead zirconate titanate films for actuator applications

Effect of Solvent on MOCVD of Pb(Zr, Ti)O[sub 3] Films with Liquid-Delivery Source Supply Method

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Fabrication and Characterization of a PZT thin Film Actuator for a Micro Electromechanical Switch Application

Cited by 3 publications

References 11 publications

Preparation of Pb(Mg1/3Nb2/3)O3–Pb(Zr,Ti)O3 Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Preparation of Pb(Mg1/3Nb2/3)O3–Pb(Zr,Ti)O3 Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Texture-control of lead zirconate titanate films for actuator applications

Effect of Solvent on MOCVD of Pb(Zr, Ti)O[sub 3] Films with Liquid-Delivery Source Supply Method

Contact Info

Product

Resources

About

Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties