Fabrication and characterization of a thermal flow sensor based on porous silicon technology

Domı́nguez, Daniel; Bonvalot, B.; Chau, Mokit; Suski, J.

doi:10.1088/0960-1317/3/4/021

Cited by 11 publications

(4 citation statements)

References 1 publication

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“…A sensor which uses a thermal measurement principle for recording gas flows was developed and shown in [Domi93] . A schematic diagram of the sensor is shown in Figure 6.50.…”

Section: Thermal Flow Sensormentioning

confidence: 99%

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Microsystem Technology and Microrobotics

Fatikow

Rembold

1997

115

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“…A sensor which uses a thermal measurement principle for recording gas flows was developed and shown in [Domi93] . A schematic diagram of the sensor is shown in Figure 6.50.…”

Section: Thermal Flow Sensormentioning

confidence: 99%

“…According to[Domi93] Several prototypes with an overall dimension of 5 mm x 5 mm were produced. According to[Domi93] Several prototypes with an overall dimension of 5 mm x 5 mm were produced.…”

mentioning

confidence: 99%

Microsystem Technology and Microrobotics

Fatikow

Rembold

1997

115

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“…The possibility of its fabrication directly from Si, which is the main substrate material for microfabrication, made PS applicable into various research disciplines. It was firstly used for optical purposes in microelectronics, 15,16 later its application area became wider, such as in mechanical sensors, [17][18][19][20][21][22][23] thermal insulation layers, [24][25][26][27] and chemical applications. [28][29][30][31][32] Our group previously reported the integration of the PS layers in ordered pillar arrays for liquid chromatography 33 and a characterization study afterwards.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of integrated porous glass for microfluidic applications

et al. 2013

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This paper presents a method for the fabrication of integrated porous silica layers in microfluidic channel networks by microfabrication techniques. Porous silica is obtained by anodization of silicon, followed by full conversion of the porous silicon network into porous silica by means of thermal oxidation. A series of experiments were performed with various channel layouts to determine the critical parameters, including the I-V characteristics and the optimal working potential for stable pore formation, during anodic etching. Typical test structures were anodized in 5% HF for 15 min at 1 V, yielding an average pore size of around 5.4 nm and porosity of 49%. Complete conversion of porous silicon into porous glass was accomplished with wet oxidation at 900 °C. The average pore size and porosity of porous glass network were around 3.8 nm and 34%, respectively. This decrease in both pore size and porosity is caused by the increase in molar volume when silicon oxidizes to silicon oxide. The transparency and the hydrophilicity of porous glass layers are evidenced by means of monitoring the diffusion of Rhodamine B fluorescent dye through the porous network. This fabrication method can be applied to (3-D) structured microfluidic channels and it is envisioned that the resulting porous silica layers can be employed for a wide range of application areas, such as membrane technology, catalyst supports, chromatography and electrokinetics.

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“…Porous silicon provides a planar sacrificial surface and is formed much more quickly than thermally grown or chemically deposited sacrificial layers. It can also be oxidized to form thick sacrificial oxide layers [13], thick oxide layers for thermal isolation [14] or for SOI applications [15], or used directly as a sacrificial layer [11]. The large surface area of porous silicon yields a high etch rate, which is desirable for a sacrificial layer.…”

Section: Introductionmentioning

confidence: 99%

Porous silicon as a sacrificial material

Bell

Gennissen

DeMunter

et al. 1996

J. Micromech. Microeng.

128

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Porous silicon is emerging in micromachining technology as an excellent material for use as a sacrificial layer. This is largely due to the ease of fabrication and freedom of design it allows. The rate of pore formation is heavily dependent upon the doping type and concentration of the silicon, allowing patterned porous silicon formation through selective doping of the substrate. Etch-rates above 10 mm min −1 have been reported for highly doped material. Silicon that has been made porous can be quickly and easily removed in a dilute hydroxide solution, as low as 1%. Porous silicon technology offers the unique ability to fabricate free-standing structures in single-crystal silicon with separation distances from the substrate ranging from a few microns to over one hundred microns. A review of the development of porous silicon for micromachining applications is given.

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Fabrication and characterization of a thermal flow sensor based on porous silicon technology

Cited by 11 publications

References 1 publication

Microsystem Technology and Microrobotics

Microsystem Technology and Microrobotics

Fabrication of integrated porous glass for microfluidic applications

Porous silicon as a sacrificial material

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