Porous silicon as a sacrificial material

Bell, T.E.; Gennissen, P.T.J.; DeMunter, D; Kuhl, Michael

doi:10.1088/0960-1317/6/4/002

Cited by 128 publications

(67 citation statements)

References 36 publications

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“…Depending on the etching conditions, as shown in Figure 6, n-type material can be selectively etched, although the resulting pore structure is quite different [11]. Etching time also affects the porosity where porosity which increases with etching time due to increase voids between column and reach to constant value because of dissolution porous layer with etching time.…”

Section: Etching Rates In Various Systemsmentioning

confidence: 99%

Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

Kashyout¹,

Soliman²,

Nabil³

et al. 2013

MSA

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The fabrication of nano porous silicon, nPSi, using alkali etching process has been studied and carried out. The surface chemistry of anisotropic etching of n-type Si-wafer is reviewed and the anisotropic chemical etching of silicon in alkaline solution using wetting agents is discussed. Transformation of crystallographic plane of n-Si (211) to nPSi (100) has occurred on using n-propanol as wetting agent. The rate of pore formation was 0.02478 -0.02827 µm/min, which was heavily dependent upon the concentration of the etchant containing wetting agents, allowing patterned porous silicon formation through selective doping of the substrate. A particle size of 15 nm for porous nano-silicon was calculated from the XRD data. Porosity of PS layers is about 10%. Pore diameter and porous layer thickness are 0.0614 nm and 16 µm, respectively. The energy gap of the produced porous silicon is 3.3 eV. Furthermore, the combination of PS with Congo Red, which are nanostructured due to their deposition within the porous matrix is discussed. Such nano compounds offer broad avenue of new and interesting properties depending on the involved materials as well as on their morphology. Chemical route was utilized as the host material to achieve pores filling. They were impregnated with Congo Red, which gave good results for the porous silicon as a promising pH sensor.

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Section: Etching Rates In Various Systemsmentioning

confidence: 99%

Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

Kashyout¹,

Soliman²,

Nabil³

et al. 2013

MSA

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“…A process which using silicon as both mechanical and sacrificial layer is the sacrificial porous silicon technique (Lang, 1995, Gennissen, 1995, 1999, Bell, 1996. This process makes use of the fact that, without illumination, p-type material is made porous selectively.…”

Section: Sacrificial Porous Siliconmentioning

confidence: 99%

Integrated MEMS: Opportunities & Challenges

French¹,

Sarro²

2012

Micromachining Techniques for Fabrication of Micro and Nano Structures

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“…Masking materials for defining porous silicon (PS) regions on a silicon substrate can be formed using insulators, metals, or implanted impurities [1][2][3]. Dielectric masks such as silicon nitride or silicon dioxide are widely used throughout the literature [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

The effect of a biased conductive mask on porous silicon formation

Oisten

Bergstrom

2009

Phys. Status Solidi (c)

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Patterned macro porous p ‐type silicon has been produced using a conductive chromium and gold mask while the masking layers were electrically biased under a variety of conditions. The purpose of this work is to study the impact on pore formation near the mask edge by the modulation of the electric field orientation adjacent to the mask edge. The goal is to minimize the amount of lateral pore growth at the mask edge. The masking layers were biased at potentials between the anode and cathode potential during electrochemical anodization in an ethanoic hydrofluoric acid solution. Process conditions were defined to transfer a fraction of the total current from the sample substrate to the cathode, effectively controlling the current density in the mask, and control the electric field orientation near the mask edge. The mask bias impacted the etch rate and the profile of the pore growth at the mask edge. It was observed that if the mask was biased with respect to the anode, the impact on the porous silicon profile at the mask edge was greater than with other biasing configurations. It was observed also that the etch rate of the chromium masking layer was accelerated while biasing with respect to the cathode at a constant current density. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Porous silicon as a sacrificial material

Cited by 128 publications

References 36 publications

Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

Fabrication of Congo Red/Oxidized Porous Silicon (CR/OPS) pH-Sensors

Integrated MEMS: Opportunities & Challenges

The effect of a biased conductive mask on porous silicon formation

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