Fabrication and characterization of a Gallium co-doped Erbium optical fiber

Dissanayake, Kasun Prabuddha Wasantha; Abdul-Rashid, H. A.; Safaei, Alireza; Oresegun, Adebiyi; Shahrizan, N.; Omar, Nasr Y. M.; Yusoff, Z.; Zulkifli, Mohd Zamani; Muhamad-Yassin, S. Z.; Mat-Sharif, K. A.; Tamchek, N.

doi:10.1109/icp.2014.7002327

Cited by 7 publications

(11 citation statements)

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“…We recently demonstrated an amplifier with a small-signal gain of 22.45 dB using a 2 m Ga-EDF in a singlepass configuration (Marzuki et al, 2020). Figure 2 shows the absorption spectra for the Ga-EDF reported by Dissanayake et al (2015). The spectra indicate that the Ga-EDF absorption is high at the standard pump wavelengths, 980 nm and 1480 nm.…”

Section: Literature Reviewmentioning

confidence: 99%

“…The solubility of rare-earth ions in the chalcogenide glass was increased with the presence of Gallium. Researchers at our research center conducted the first attempt to use Gallium as a co-dopant in a silica host by fabricating the Ga-EDF fiber using the MCVD and solution doping method (Dissanayake et al, 2015). The absorbance, fluorescence lifetime, and ASE were characterized (Dissanayake, 2015).…”

Section: Literature Reviewmentioning

confidence: 99%

“…Researchers at our research center conducted the first attempt to use Gallium as a co-dopant in a silica host by fabricating the Ga-EDF fiber using the MCVD and solution doping method (Dissanayake et al, 2015). The absorbance, fluorescence lifetime, and ASE were characterized (Dissanayake, 2015). However, no analysis was done on the amplifier's performance at different pump wavelengths.…”

Section: Literature Reviewmentioning

confidence: 99%

“…Gallium co-doped Erbium fiber (Ga-EDF) was fabricated using modified chemical vapor deposition (MCVD) with a solution doping method to study its properties and potentials as a gain medium of a compact optical fiber amplifier (Dissanayake et al, 2015). The Erbium concentration and the Ga:Er ratio were approximately 2008 ppm and 17, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier

et al. 2021

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Background: One way to reduce the length of the gain medium in Erbium-Doped Fiber Amplifier (EDFA) is by doping the fiber core with a high concentration of Erbium. However, this method caused ion clustering effects, which limits the EDFA’s efficiency. In this research, the use of Gallium as a new co-dopant in erbium-doped silica fiber is explored. Methods: The new fiber, namely Gallium co-doped Erbium fiber (Ga-EDF), is used as a gain medium in an optical fiber amplifier setup. A 2-meter length of the Ga-EDF fiber was used in a single pass configuration with a forward pumping scheme at 150 mW pump power. The Ga-EDF amplifier's gain and noise figure while pumping at 980 nm and 1480 nm were compared. The amplifier's performance was evaluated as the input signal power varied between -30 dBm to 3 dBm, over the wavelength range of 1520 nm to 1580 nm. Results: The 980 nm-pumped Ga-EDF amplifier achieved the maximum small-signal gain of 22.45 dB and the corresponding noise figure of 5.71 dB at the input signal wavelength of 1535 nm. Meanwhile, the 1480 nm-pumped Ga-EDF amplifier attained the maximum small-signal gain of 20.83 dB and the corresponding noise figure of 5.09 dB at the input signal wavelength of 1550 nm. At the input signal power below -20 dBm and the wavelength range 1520 nm to 1547 nm, the Ga-EDF performs better when pumped at 980 nm. Their performance is comparable at the input signal wavelength range between 1547 nm to 1580 nm. At the input signal power above -20 dBm, the 1480 nm-pumped Ga-EDF outperformed the 980 nm-pumped amplifier. Conclusions: The overall performance indicates that the gain saturation point of the 1480 nm-pumped amplifier is higher than the 980 nm-pumped.

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Section: Literature Reviewmentioning

confidence: 99%

Section: Literature Reviewmentioning

confidence: 99%

Section: Literature Reviewmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier

et al. 2021

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“…Gallium co-doped Erbium fiber (Ga-EDF) was fabricated using modified chemical vapor deposition (MCVD) with a solution doping method to study its properties and potentials as a gain medium of a compact optical fiber amplifier (Dissanayake et al, 2015). The Erbium concentration in the fabricated Ga-EDF was approximately 2008 ppm.…”

Section: Introductionmentioning

confidence: 99%

Comparison of 1480 nm and 980 nm-pumped Gallium-Erbium fiber amplifier

et al. 2021

Self Cite

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Background: One way to reduce the length of the gain medium in Erbium-Doped Fiber Amplifier (EDFA) is by doping the fiber core with a high concentration of Erbium. However, this method caused ion clustering effects, which limits the EDFA’s efficiency. In this research, the use of Gallium as a new co-dopant in erbium-doped silica fiber is explored. Methods: The new fiber, namely Gallium co-doped Erbium fiber (Ga-EDF), is used as a gain medium in an optical fiber amplifier setup. A 2-meter length of the Ga-EDF fiber was used in a single pass configuration with a forward pumping scheme at 150 mW pump power. The Ga-EDF amplifier's gain and noise figure while pumping at 980 nm and 1480 nm were compared. The amplifier's performance was evaluated as the input signal power varied between -30 dBm to 3 dB, over the wavelength range of 1520 nm to 1580 nm. Results: The 980 nm-pumped Ga-EDF amplifier achieved the maximum small-signal gain of 22.45 dB and the corresponding noise figure of 5.71 dB at the input signal wavelength of 1535 nm. Meanwhile, the 1480 nm-pumped Ga-EDF amplifier attained the maximum small-signal gain of 20.83 dB and the corresponding noise figure of 5.09 dB at the input signal wavelength of 1550 nm. At the input signal power below -20 dBm and the wavelength range 1520 nm to 1547 nm, the Ga-EDF performs better when pumped at 980 nm. Their performance is comparable at the input signal wavelength range between 1547 nm to 1580 nm. At the input signal power above -20 dBm, the 1480 nm-pumped Ga-EDF outperformed the 980 nm-pumped amplifier. Conclusions: The overall performance indicates that the gain saturation point of the 1480 nm-pumped amplifier is higher than the 980 nm-pumped.

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