Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Maekrua, Takayuki; Goto, Taiki; Nakae, Kohei; Yamamoto, Keisuke; Nakashima, Hiroshi; Wang, Dong

doi:10.7567/1347-4065/aafb5e

Cited by 4 publications

(6 citation statements)

References 38 publications

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“…PL signals from GOI have higher intensities than those obtained from the bulk Ge reference sample. This might be explained by carrier confinement in the thin GOI layer, 47) since the limited Ge thickness prevents exciton diffusion, and the probability of radiative recombination increases in the case of GOI compared with bulk Ge. In addition, the PL intensity caused by the indirect band-to-band transitions, at an energy around 0.7 eV, is significantly lower in case of the GOI sample.…”

Section: Layer Transfer and Detachmentmentioning

confidence: 99%

Ge-on-insulator fabrication based on Ge-on-nothing technology

Yamamoto,

Wang,

Loo

et al. 2024

Jpn. J. Appl. Phys.

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Ge-on-Insulator (GOI) is considered a necessary structure for novel Ge-based devices. This paper proposes an alternative approach for fabricating GOI based on the Ge-on-Nothing (GeON) template. In this approach a regular macropore array is formed by lithography and dry etching. These pores close and merge upon annealing, forming a suspended monocrystalline Ge membrane on one buried void. GOI is fabricated by direct bonding of GeON on Si carrier substrates, using an oxide bonding interface, and subsequent detachment. The fabricated GOI shows uniform physical properties as demonstrated using micro-photoluminescence measurements. Its electrical characteristics and cross-sectional structure are superior to those of Smart-CutTM GOI. To demonstrate its application potential, back-gate GOI capacitor and MOSFETs are fabricated. Their characteristics nicely agree with the theoretically calculated one and show typical MOSFET operations, respectively, which indicates promising Ge crystallinity. This method, therefore, shows the potential to provide high-quality GOI for advanced Ge application devices.

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Section: Layer Transfer and Detachmentmentioning

confidence: 99%

Ge-on-insulator fabrication based on Ge-on-nothing technology

Yamamoto,

Wang,

Loo

et al. 2024

Jpn. J. Appl. Phys.

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“…We fabricated an asymmetric metal/Ge/metal diode to investigate EL performance. The fabrication process is briefly introduced in the following, of which the details are given elsewhere (3). We used a GOI substrate with a four-layer structure of 500 nm-Ge/3 nm-Al2O3 /100 nm-SiO2/Si handle substrate.…”

Section: Electroluminescence Of Asymmetric Metal/ge/metal Diode On Goimentioning

confidence: 99%

“…Ge has received much interest as a CMOS channel material due to its superior characteristics, particularly high carrier mobilities (1). Besides, the quasi-direct band structure of Ge enables a certain population in Γ valley due to intervalley scattering of conduction band electrons, and it can be applied for near-infrared optical applications such as on-chip optical interconnect (2,3). On the other hand, Ge has a drawback of relatively large leakage current density due to its narrow bandgap.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications

Yamamoto¹,

Wang²,

Nakashima³

2021

ECS Trans.

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Ge has been received much interest as a CMOS channel material and a near-infrared optical material due to its superior characteristics. Ge-on-Insulator (GOI) structure is necessary to suppress large leakage current originating from the narrow bandgap for application use. A method combined wafer bonding and layer splitting by hydrogen ion (H + ) implantation, known as Smart-Cut TM realized for Si-on-Insulator fabrication, has been tried to apply for fabricating GOI with large diameter, uniform thickness, and single crystal. In this study, we fabricated GOI by Smart-Cut TM technique and demonstrated electronic and optoelectronic devices on the GOI. Besides, we combined a Ge epitaxial growth method with the Smart-Cut TM technique to improve GOI quality.

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“…Thanks to the great efforts by many research groups, extremely high electron and hole mobilities of Ge MOS field-effect transistors (FETs) have been reported, showing values of 2-3 times higher than those of Si (1)(2)(3). Besides, the quasi-direct bandgap of Ge enables near infrared optical applications such as on-chip optical interconnect (4,5). Other Ge-based novel devices such as spintronics and thin-film transistors are also attracting great attention (6)(7)(8).…”

Section: Introductionmentioning

confidence: 99%

“…Linear fittings using Eqs. [3] and [5] were done for Φ BN -Φ M and Φ BP -Φ M plots of metal/a-IL/Ge contacts with the same rf power in Fig. 3.…”

mentioning

confidence: 99%

(Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer

2021

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Ge is attracted great attention as a candidate of channel material for future CMOS devices and near-infrared optical devices, owing to its high intrinsic carrier mobility and narrow bandgap. One of the difficulties to realize Ge-based devices is to control of Schottky barrier height (SBH) at metal/Ge interface. It is widely known any metal/Ge contact shows high electron barrier height (ΦBN > 0.5 eV) due to Fermi level pinning at metal/Ge interface. Our group found a method to alleviate the FLP, by which sputter-deposited ZrN/Ge contacts showed low ΦBN (< 0.10 eV) and high hole barrier height (ΦBP > 0.56 eV). From detailed structural analyses, FLP alleviation was induced by a nitrogen-contained amorphous interlayer (a-IL) formed during ZrN sputter-deposition. If we can change the kind of metal on a-IL, we may extend the control range of SBH. In this paper, we demonstrate the wide range SBH control for metal/a-IL/Ge contacts.

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Fabrication and characterization of asymmetric metal/Ge/metal diodes with Ge-on-insulator substrate

Cited by 4 publications

References 38 publications

Ge-on-insulator fabrication based on Ge-on-nothing technology

Ge-on-insulator fabrication based on Ge-on-nothing technology

(Invited) Fabrication of Ge-on-Insulator By Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications

(Invited) Schottky Barrier Height Control at Metal/Ge Interface by Insertion of Nitrogen Contained Amorphous Layer

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