Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

Vallett, Aaron; Minassian, Sharis; Kaszuba, Phil; Datta, Suman; Redwing, Joan M.; Mayer, Theresa S.

doi:10.1021/nl102239q

Cited by 82 publications

(65 citation statements)

References 45 publications

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“…For the non-adiabatic region, a value of α = 3/2 was used. Using Equation 9, the activation energy was estimated to be ∼ 0.34 eV and 0.24 eV for ohmic and NDR regions, respectively. Figure 10b and 10c shows adiabatic conductivity vs. inverse temperatureplot for tunnel diode in the dark condition for α = 1 and α = 1.5 respectively.…”

Section: Resistance = Aementioning

confidence: 99%

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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The resistive switching behavior of TiO 2 based electronic devices have been extensively investigated the last two decades due to their low cost and potential applications in high speed electronic devices. However, the randomness in switching behavior and uncertainty in conducting filament formation often restricts their usage for long-term applications. A duality in current transport mechanism was observed when nano-architectural parameters of the TiO 2 memory resistance device were altered. TiO 2 nanotube-CZTS nanocrystals based devices exhibit Fowler-Nordheim quantum tunneling, whereas TiO 2 nanocrystals-CZTS thin film based devices exhibit space charge limited conduction. Temperature dependent electrical studies indicate that polaronic transport is one of the phenomena assisting in electrical conduction. Electronic band information suggests that tunneling between CZTS and TiO 2 is indirect. A unique interface state between two adjacent materials seems to be responsible for the negative differential resistance (NDR) behavior of Low cost electrical bistability due to nonlinear conducting behavior has been an exciting area of research in recent years. [1][2][3][4][5][6][7][8] Several new devices such as tunnel diodes, multivibrators, and organic bistable systems have been investigated.1-7 Some of these devices possess unique I-V characteristics and non-conventional current transport mechanisms. Devices showing negative differential resistance (NDR) can be utilized for various low power applications such as radio frequency, logic and neuromorphic devices, fast switching, and high frequency oscillators.1-7,9-11 Materials such as carbon nanotubes, graphene, and conducting polymers have been recently utilized for room temperature NDR behavior or memory resistance applications. [1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .14 Thin film memory resistors offer advantages such as high switching speed and low energy electroforming. The use of thin film TiO 2 in a memory resistor has demonstrated potential dependent on/off switching when sandwiched between two platinum contacts. 15 It is generally believed that a memoresistance effect in TiO 2 nanostructures is based on the mobility of vacancies or defects. [15][16][17] The conduction mechanism is based on the formation and transport of conducting filament (CF). A conducting filament generally consists of oxygen vacancies that form or break due to electric field driven migration. Because of randomness and uncertainty in CF's formation, resistance-switching (RS) devices often perform randomly and thus have less control over operating parameters. Another report suggests that Joule heating is also a major cause for current controlled negative resistance behavior. 18 This behavior relies on polaronic transport in TiO 2 . In polaronic transport, the hopping motion of small polarons up to certain temperatures influences conduction. Several other mechanisms and switching modes such...

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Section: Resistance = Aementioning

confidence: 99%

“…[1][2][3][4][5][6][7]9,10,12,13 Memory resistors can be fabricated using semiconductors and metal oxides such as Nb 2 O 5 , NiO, ZnO and TiO 2 .…”

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confidence: 99%

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Sarswat

Smith

Free

et al. 2015

ECS J. Solid State Sci. Technol.

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“…Together with these effects, higher OFF state leakage (I OFF ) and reduced I ON /I OFF ratio are thus expected for sub-65 nm conventional Si MOSFETs. Recently, interband tunneling field-effect-transistors (TFETs) [1][2][3][4][5][6][7][8][9][10] based on band-to-bandtunneling (BTBT) injection mechanism different from diffusion over a potential barrier have been proposed and studied in order to reduce SS below the diffusion limit of 60 mV/dec and reduce I OFF . Numerical simulation model of TFET devices using carbon nanotube, [1][2][3] Ge, 4 Si, [5][6][7] and III-V 8-10 materials exhibited remarkable higher transistor I ON current and steeper SS.…”

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confidence: 99%

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Zhu

Jain

Vijayaraghavan

et al. 2012

Journal of Applied Physics

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Articles you may be interested inThe structural, morphological, defect properties, and OFF state leakage current mechanism of mixed As-Sb type-II staggered gap GaAs-like and InAs-like interface heterostructure tunnel field effect transistors (TFETs) grown on InP substrates using linearly graded In x Al 1-x As buffer by molecular beam epitaxy are investigated and compared. Symmetric relaxation of >90% and >75% in the two orthogonal h110i directions with minimal lattice tilt was observed for the terminal GaAs 0.35 Sb 0.65 and In 0.7 Ga 0.3 As active layers of GaAs-like and InAs-like interface TFET structures, respectively, indicating that nearly equal numbers of a and b dislocations were formed during the relaxation process. Atomic force microscopy reveals extremely ordered crosshatch morphology and low root mean square roughness of $3.17 nm for the InAs-like interface TFET structure compared to the GaAs-like interface TFET structure of $4.46 nm at the same degree of lattice mismatch with respect to the InP substrates. The GaAs-like interface exhibited higher dislocation density, as observed by cross-sectional transmission electron microscopy, resulting in the elongation of reciprocal lattice point of In 0.7 Ga 0.3 As channel and drain layers in the reciprocal space maps, while the InAs-like interface creates a defect-free interface for the pseudomorphic growth of the In 0.7 Ga 0.3 As channel and drain layers with minimal elongation along the Dx direction. The impact of the structural differences between the two interface types on metamorphic TFET devices was demonstrated by comparing p þ -i-n þ leakage current of identical TFET devices that were fabricated using GaAs-like and InAs-like interface TFET structures. Higher OFF state leakage current dominated by band-to-band tunneling process due to higher degree of defects and dislocations was observed in GaAs-like interface compared to InAs-like interface where type-II staggered band alignment was well maintained. Significantly lower OFF state leakage current dominated by the field enhanced Shockley-Read-Hall generation-recombination process at different temperatures was observed in InAs-like TFET structure. The fixed positive charge at the source/channel heterointerface influences the band lineup substantially with charge density greater than 1 Â 10 12 /cm 2 and the band alignment is converted from staggered gap to broken gap at $6 Â 10 12 /cm 2 . Clearly, InAs-like interface TFET structure exhibited 4Â lower OFF state leakage current, which is attributed primarily to the impact of the layer roughness, defect properties on the carrier recombination rate, suggesting great promise for metamorphic TFET devices for high-performance, and ultra-low power applications. V C 2012 American Institute of Physics.

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“…It is clear that MOSFET is limited in subthreshold swing (SS) (60 mV/decade at room temperature) in recent technology (nanoscale system design) So tunnel field--effect transistor (TFET) is considered the best substitute for conventional CMOS (Zhao, et al, 2011). Enhance the current and steep subthreshold swing (below 60 mv/decade) are reliable trait as compared with MOS technology in ultralow voltage and high frequency applications (Vallett, et al, 2010;Ionescu and Riel, 2011). The method of carrier relocation is band--to--band tunneling (BTBT) (Zhu, et al, 2013) model which this phenomena betide between the source region and the channel region (Khayer and Lake, 2009).…”

Section: Introductionmentioning

confidence: 99%

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

Dorostkar

Marjani

2018

HOLOS

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Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

Cited by 82 publications

References 45 publications

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

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Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

Cited by 82 publications

References 45 publications

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Duality in Resistance Switching Behavior of TiO2-Cu2ZnSnS4Device

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

DC ANALYSIS OF p-n-p-n TUNNELING FIELD-EFFECT TRANSISTOR BASED ON In0.35Ga0.65As

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Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device

Duality in Resistance Switching Behavior of TiO₂-Cu₂ZnSnS₄Device