Fabrication and characterization of Cu2ZnSnS4 thin films by sputtering a single target at different temperature

Zhao, Qian; Hao, Ruiting; Liu, Sijia; Yang, Min; Liu, Xinxing; Chang, Faran; Lu, Yilei; Wang, Shurong

doi:10.1016/j.physb.2017.08.035

Cited by 14 publications

(5 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Besides of selenization or sulfurization process, Wang et al also try to prepare kesterite films by RF magnetron sputtering single kesterite compound target without sulfurization process. They deposited CZTS film through RF magnetron sputtering a single CZTS compound target at 500 °C without the sulfurization process [86] . A 1.9 % efficient CZTS solar cell was fabricated, in which the opencircuit voltage is 580 mV.…”

Section: Sputteringmentioning

confidence: 99%

Path towards high-efficient kesterite solar cells

Wang

Zhao

Zhang

et al. 2018

Journal of Energy Chemistry

View full text Add to dashboard Cite

Kesterite structure semiconductor Cu 2 ZnSn(S,Se) 4 is one of the most promising candidate as a light absorber material to overtake the next generation of thin film solar cells, owing to its low cost, non-toxic, and earth abundant source materials. The Shockley-Queisser limit of the single junction Cu 2 ZnSn(S,Se) 4 solar cell is over 30%, signifying a large potential of this family of solar cells. In the past years, with the development of synthesis techniques, Cu 2 ZnSn(S,Se) 4 solar cells have attracted considerable attention and the power conversion efficiency of Cu 2 ZnSn(S,Se) 4 solar cell has experienced a rapid progress. Presently, the certified champion efficiency of CZTSSe solar cells has reached to 12.6%, which is far below the efficiency of Cu(In,Ga)Se 2 solar cell. In this review, the developments of Cu 2 ZnSn(S,Se) 4 solar cells in recent years are briefly reviewed. Then the fundamental understanding of Cu 2 ZnSn(S,Se) 4 solar cells is introduced, including materials and device structure, as well as the band alignment of hetero-junction and their impacts on device performance. After that, we mainly review the progress and achievements in the preparation processes, through vacuum and non-vacuum based processes. Finally, we outline the challenges and perspectives of this promising solar cell.

show abstract

Section: Sputteringmentioning

confidence: 99%

Path towards high-efficient kesterite solar cells

Wang

Zhao

Zhang

et al. 2018

Journal of Energy Chemistry

View full text Add to dashboard Cite

show abstract

“…18 The Cu-Sn alloy mainly exists in the form of Cu 6 Sn 5 as previously reported. 6,[19][20][21][22] In this work, a very strong peak is observed at $ 41.82°corresponding to the Cu 3 Sn phase. The Cu 6 Sn 5 is generated at a low temperature in a Sn-rich environment, and Cu 3 Sn is formed at high temperatures in a Cu-rich environment.…”

Section: Structural Characterizationmentioning

confidence: 81%

“…[1][2][3][4] To date, CZTS solar cells fabricated via co-sputtering Cu/ZnS/SnS have achieved the highest efficiency of 11.0%. 5 However, this efficiency remains far below the theoretically predicted photo-conversion efficiency of 32%, 6 and its high open-circuit voltage deficit is one of the key issues. 7 Since Cu and Zn have similar ionic radii, Cu Zn antisite defects can be easily formed.…”

Section: Introductionmentioning

confidence: 92%

Influence of Ag Layer Location on the Performance of Cu2ZnSnS4 Thin Film Solar Cells

Hao

Guo

et al. 2019

Journal of Elec Materi

Self Cite

View full text Add to dashboard Cite

In this work, the (Ag,Cu) 2 ZnSnS 4 (ACZTS) thin films were fabricated via sputtering with a multi-target to form different layer stacks, i.e., (S1) ZnS/Sn/ Cu/Ag/Mo,(S2) ZnS/Sn/Ag/Cu/Mo and (S3) ZnS/Ag/Sn/Cu/Mo. The stacked precursors were sulfurized through a soft annealing, followed by a two-step sulfurization in a chamber filled with N 2 at standard atmospheric pressure. The x-ray photoelectron spectroscopy elemental profile showed a vertical nonuniform distribution of Ag in the film. Based on the results of scanning electron microscopy and electron probe microanalysis, Ag enrichment of the upper surface was beneficial for the grain size. Moreover, a dense, uniform surface could be obtained and the stability of the elemental composition could be maintained. After optimizing the order of the Ag layers, the efficiency of the solar cells increased from 1.30% to 3.65%, an improvement of 181%. The open circuit voltage is increased from 448 mV to 630 mV because of the reduced voids, increased grain size, and reduced Cu Zn antisite defects.

show abstract

“…The wide range of methods is well developed to deposit ZnO, CZT, and CZTS films which split into physical (for example, magnetron sputtering [12][13][14]) and chemical (for example, Semiconductors -Growth and Characterization spray pyrolysis [5,[8][9][10]) techniques. Typically, the physical methods allow to obtain more perfect films with a higher structural quality, and these methods provide a precise control of the films thickness and low content of defects in deposited material compare to chemical methods, but physical deposition techniques require the usage of more complicated equipment and presence of high level of vacuum, thus they are energy-consuming.…”

Section: Zno Czts and Czt Thin Films Deposition Methods Peculiaritmentioning

confidence: 99%

Nanostructured ZnO, Cu2ZnSnS4, Cd1−xZnxTe Thin Films Obtained by Spray Pyrolysis Method

Dobrozhan¹,

Kurbatov²,

Danilchenko³

et al. 2018

Semiconductors - Growth and Characterization

View full text Add to dashboard Cite

The paper presents the investigation on the influence of substrate temperature T s and the sprayed initial solution volume V s on structural, substructural, optical properties, and elemental composition of ZnO and Cu 2 ZnSnS 4 (CZTS) films as well as state-of-the-art of studying the Cd 1−x Zn x Te (CZT) films obtained by spray pyrolysis technique. The singlephase nanocrystalline ZnO films with average crystallite size of D C = 25-270 nm and thickness of d = 0.8-1.2 μm can be deposited at substrate temperatures of T s > 473 K. The continuous CZTS films with optimal thickness (d = 1.3 μm) for application as absorber layers in solar cells were deposited at the sprayed initial precursor volume of V s = 5 ml. The increase of the substrate temperature up to 673 K caused the significant improvements in the stoichiometry of ZnO films. The optimal stoichiometry ratio of CZTS films for application in solar cells was obtained at V s = 3-4 ml. Optical study of ZnO films showed that these films have a high-transmission coefficient values of T = 60-80%. To the best of our knowledge, there is the lack of works devoted to the study of CZT films obtained by spray pyrolysis technique.

show abstract

Fabrication and characterization of Cu2ZnSnS4 thin films by sputtering a single target at different temperature

Cited by 14 publications

References 25 publications

Path towards high-efficient kesterite solar cells

Path towards high-efficient kesterite solar cells

Influence of Ag Layer Location on the Performance of Cu2ZnSnS4 Thin Film Solar Cells

Nanostructured ZnO, Cu2ZnSnS4, Cd1−xZnxTe Thin Films Obtained by Spray Pyrolysis Method

Contact Info

Product

Resources

About