Fabrication and Characterization of Fe-Doped In ₂ O ₃ Dilute Magnetic Semiconducting Nanowires

Abstract

Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe 2+ and Fe 3+ , as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.

Room-temperature ferromagnetism observed in Nd-doped In 2 O 3 dilute magnetic semiconducting nanowires

“…Nd-doped In 2 O 3 nanowires were grown by a CVD technique, similar to the previous route for the synthesis of Nddoped ZnO nanowires [3] and Fe-doped In 2 O 3 nanowires. [18] Source powders were produced by solid state reaction. Nd 2 O 3 (99.995%) and In 2 O 3 (99.995%) powders were mixed with alcohol as the weight ratio of 1:4 and milled for 16 h, followed by drying in air at room temperature.…”

“…[13] As an important semiconductor material, In 2 O 3 has been widely studied in various fields including semiconductor spintronics. Since Philip et al reported the interesting carrier-controlled above room-temperature ferromagnetism (RTFM) in transparent Cr-doped In 2 O 3 thin films, [14] there have been abundant research reports on RTFM in In 2 O 3 -based DMSs [15][16][17][18][19][20] as well as in pure In 2 O 3 . [21] However, most of the research focused on the 3d transition metal (TM) doping, [15][16][17][18][19][20] where TM ions occupy the corresponding lattice sites in the host with a dilute concentration to minimize the possibility of anti-ferromagnetic ordering.…”

“…Since Philip et al reported the interesting carrier-controlled above room-temperature ferromagnetism (RTFM) in transparent Cr-doped In 2 O 3 thin films, [14] there have been abundant research reports on RTFM in In 2 O 3 -based DMSs [15][16][17][18][19][20] as well as in pure In 2 O 3 . [21] However, most of the research focused on the 3d transition metal (TM) doping, [15][16][17][18][19][20] where TM ions occupy the corresponding lattice sites in the host with a dilute concentration to minimize the possibility of anti-ferromagnetic ordering. [22] Compared with TMs with open d shells, 4f rare earth (RE) ions may offer the stronger magnetic interaction and anisotropy and thus may possess the larger magnetic moments in doped semiconductors.…”

Preparação e estudo das propriedades fotoluminescentes de nanoestruturas de In2O3 puro e dopado com íons La3+ e Er3+

“…Dentre os métodos químicos utilizados na síntese de partículas de In 2 O 3 destacam-se o sol-gel, solvotermal, hidrotérmico convencional, hidrotérmico de microondas, co-precipitação e deposicão química de vapor [GAO et al, 2015;MOTTA et al, 2010;NIU et al, 2006;XING et al, 2015;WU et al, 2015;ZHANG et al, 2015. ]…”