Fe-doped In2O3 dilute magnetic semiconducting nanowires are fabricated on Au-deposited Si substrates by the chemical vapor deposition technique. It is confirmed by energy dispersive x-ray spectroscopy (EDS), x-ray photoelectron spectroscopy (XPS) and Raman spectroscopy that Fe has been successfully doped into lattices of In2O3 nanowires. The EDS measurements reveal a large amount of oxygen vacancies existing in the Fe-doped In2O3 nanowires. The Fe dopant exists as a mixture of Fe 2+ and Fe 3+ , as revealed by the XPS. The origin of room-temperature ferromagnetism in Fe-doped In2O3 nanowires is explained by the bound magnetic polaron model.

Nd-doped In 2 O 3 nanowires were fabricated by an Au-catalyzed chemical vapor deposition method. Nd atoms were successfully doped into the In 2 O 3 host lattice structure, as revealed by energy dispersive x-ray spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, and x-ray diffraction. Robust room temperature ferromagnetism was observed in Nd-doped In 2 O 3 nanowires, which was attributed to the long-range-mediated magnetization among Nd 3+ -vacancy complexes through percolation-bound magnetic polarons.