Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

Ma, Beihai; Narayanan, Manoj; Tong, Sheng; Balachandran, U.

doi:10.1007/s10853-009-3910-0

Cited by 15 publications

(5 citation statements)

References 19 publications

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“…More interestingly, a conductive oxide buffer layer between the dielectric film and the electrode was confirmed to contribute to the high‐quality film‐on‐foil sheets due to the absence of harmful interfacial secondary phases . A 1.15 µm‐thick Pb 0.92 La 0.08 Zr 0.52 Ti 0.48 O 3 film deposited on Hastelloy C276 substrates with LNO films as an intermediate buffer layer exhibited slimmer hysteresis loops and lower leakage current density as compared to specimens without the LNO buffer, with the maximum energy‐storage capability being reported to be ≈65 J cm −3 …”

Section: State‐of‐the‐art High‐energy‐storage Dielectricsmentioning

confidence: 92%

Homogeneous/Inhomogeneous‐Structured Dielectrics and their Energy‐Storage Performances

et al. 2017

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The demand for dielectric capacitors with higher energy-storage capability is increasing for power electronic devices due to the rapid development of electronic industry. Existing dielectrics for high-energy-storage capacitors and potential new capacitor technologies are reviewed toward realizing these goals. Various dielectric materials with desirable permittivity and dielectric breakdown strength potentially meeting the device requirements are discussed. However, some significant limitations for current dielectrics can be ascribed to their low permittivity, low breakdown strength, and high hysteresis loss, which will decrease their energy density and efficiency. Thus, the implementation of dielectric materials for high-energy-density applications requires the comprehensive understanding of both the materials design and processing. The optimization of high-energy-storage dielectrics will have far-reaching impacts on the sustainable energy and will be an important research topic in the near future.

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Section: State‐of‐the‐art High‐energy‐storage Dielectricsmentioning

confidence: 92%

Homogeneous/Inhomogeneous‐Structured Dielectrics and their Energy‐Storage Performances

et al. 2017

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“…23 Several key differences between bulk ceramics and thin films should be noted here. First, the grain size in our PLZT (8/52/48) thin films is <100 nm, 25 and the intrinsic and extrinsic response and their temperature dependence in thin films could be subdued due to the grain-size effect, where a drastic reduction in both contributions to the electrical properties can be expected, as observed by Randall et al 26 for the hydrostatic piezoelectric coefficient (grain size below 2.1 lm) and remanent polarization (grain size below 0.8 lm) in PZT (52/48) ceramics. This observation is also confirmed by the systematic reduction of the dielectric permittivity maximum at the curie temperature (from $25 000 to $7000) with decrease in grain size from $14.3 to 0.9 lm.…”

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confidence: 95%

Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

Narayanan

Tong

Liu

et al. 2013

Applied Physics Letters

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Because most domain wall motion (extrinsic) is arrested at high bias fields, experiments were conducted to evaluate the lattice (intrinsic) contributions to the dielectric response of lead lanthanum zirconate titanate (PLZT) at 0-100 MV/m, 213-523 K, and 1-1000 kHz. The intrinsic contribution depended weakly on bias field and frequency, while the extrinsic contribution strongly depended on these same parameters as well as temperature. The threshold bias field required to suppress domain wall motion in PLZT thin films was ∼20-25 MV/m, and the intrinsic permittivity measured at those fields was ∼300-350, in agreement with literature values.

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“…Complete dissolution was achieved with the aid of a magnetic stirrer. Excess amounts of lead (typically 3%) were used to compensate for possible lead volatilization (Ma et al , 2009). On complete dissolution, two solutions were poured into a large beaker and stirred for approximately 10 min.…”

Section: Methodsmentioning

confidence: 99%

X-ray powder diffraction refinement of PbTi_(1−x)Fe_xO_(3−δ) solid solution series

2013

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A series of iron-doped lead titanate PbTi(1−x)FexO(3−δ) samples in the x = 0–1 composition range was prepared using sol–gel synthesis at a calcination temperature of 700 °C. The room temperature CuKα powder diffraction data collected from x = 0, 0.005, 0.01, 0.025, 0.05, 0.075, 0.1, 0.125, 0.15, 0.175, 0.2, and 0.3 samples were analyzed using the Rietveld method. Magnetoplumbite (PbFe12O19) secondary phase formation was observed at compositions x = 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, and 1. Fe-composition dependent decrease of tetragonal distortion has been observed. According to Vegard's law, the B-site iron solubility limit in the lead titanate host was found to be approximately 10 mol% (x = 0.1). Homogeneous distribution of dopants below the solubility limit was evidenced by the linear behavior of unit-cell parameters. The absence of a cubic phase and the persistence of distorted oxygen octahedra indicated the existence of ferroelectric properties even at the x = 0.3 composition. Beyond x = 0.3, the P4mm tetragonal model was determined to be invalid possibly because of oxygen defect driven structural changes, mainly tilting Fe-polyhedra.

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Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

Cited by 15 publications

References 19 publications

Homogeneous/Inhomogeneous‐Structured Dielectrics and their Energy‐Storage Performances

Homogeneous/Inhomogeneous‐Structured Dielectrics and their Energy‐Storage Performances

Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

X-ray powder diffraction refinement of PbTi_(1−x)Fe_xO_(3−δ) solid solution series

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Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

Cited by 15 publications

References 19 publications

Homogeneous/Inhomogeneous‐Structured Dielectrics and their Energy‐Storage Performances

Homogeneous/Inhomogeneous‐Structured Dielectrics and their Energy‐Storage Performances

Estimation of intrinsic contribution to dielectric response of Pb0.92La0.08Zr0.52Ti0.48O3 thin films at low frequencies using high bias fields

X-ray powder diffraction refinement of PbTi(1−x)FexO(3−δ) solid solution series

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X-ray powder diffraction refinement of PbTi_(1−x)Fe_xO_(3−δ) solid solution series